M25P20-VMN6 NUMONYX, M25P20-VMN6 Datasheet - Page 39

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M25P20-VMN6

Manufacturer Part Number
M25P20-VMN6
Description
IC FLASH 2MBIT 50MHZ 8SOIC
Manufacturer
NUMONYX
Series
Forté™r
Datasheet

Specifications of M25P20-VMN6

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
2M (256K x 8)
Speed
50MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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REVISION HISTORY
Table 22. Document Revision History
25-May-2001
11-Sep-2001
16-May-2002
12-Sep-2002
13-Dec-2002
21-Dec-2004
24-Nov-2003
05-Aug-2004
01-Aug-2005
12-Apr-2001
16-Jan-2002
26-Apr-2004
Date
Rev.
1.0
1.1
1.2
1.3
1.4
1.5
1.6
2.0
3.0
4.0
5.0
6.0
Document written
Serial Paged Flash Memory renamed as Serial Flash Memory
Changes to text: Signal Description/Chip Select; Hold Condition/1st para; Protection modes;
Release from Power-down and Read Electronic Signature (RES); Power-up
Repositioning of several tables and illustrations without changing their contents
Power-up timing illustration; SO8W package removed
Changes to tables: Abs Max Ratings/V
FAST_READ instruction added. Document revised with new timings, V
rate. Descriptions of Polling, Hold Condition, Page Programming, Release for Deep Power-
down made more precise. Value of t
Clarification of descriptions of entering Standby Power mode from Deep Power-down mode,
and of terminating an instruction sequence or data-out sequence.
VFQFPN8 package (MLP8) added. Document promoted to full datasheet.
Typical Page Program time improved. Write Protect setup and hold times specified, for
applications that switch Write Protect to exit the Hardware Protection mode immediately before
a WRSR, and to enter the Hardware Protection mode again immediately after.
Table of contents, warning about exposed paddle on MLP8, and Pb-free options added.
40MHz AC Characteristics table included as well as 25MHz. I
values improved. Change of naming for VDFPN8 package
Automotive range added. Soldering temperature information clarified for RoHS compliant
devices. Device Grade clarified
Device Grade information clarified. Data-retention measurement temperature corrected.
Details of how to find the date of marking added.
2 Notes removed from
timing line of t
Updated Page Program (PP) instructions in
Instruction Times (Device Grade 6)
SHQZ
modified in
Table 21., Ordering Information
Figure 25., Output
Description of Revision
and
W
(max) modified.
IO
Instruction Times (Device Grade
; DC Characteristics/V
Page
Programming,
Timing.
Scheme. Small text changes. End
CC3
IL
Page Program
(max), t
WI
SE
, I
3).
CC3
(typ) and t
and clock slew
(PP),
M25P20
BE
(typ)
39/40

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