M29DW128F70NF6E NUMONYX, M29DW128F70NF6E Datasheet - Page 80

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M29DW128F70NF6E

Manufacturer Part Number
M29DW128F70NF6E
Description
IC FLASH 128MBIT 70NS 56TSOP
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet

Specifications of M29DW128F70NF6E

Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
128M (16Mx8, 8Mx16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
56-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Common Flash Interface (CFI)
Table 38.
1. Erase Block Region 1 corresponds to addresses 000000h to 007FFFh; Erase block Region 2 corresponds to addresses
80/94
2Ah
2Bh
2Ch
2Dh
2Eh
3Ah
3Bh
3Ch
x16
27h
28h
29h
2Fh
30h
31h
32h
33h
34h
35h
36h
37h
38h
39h
008000h to 3F7FFFh and Erase Block Region 3 corresponds to addresses 3F8000h to 3FFFFFh.
Address
4Eh
5Ah
5Ch
5Eh
6Ah
6Ch
6Eh
50h
52h
54h
56h
58h
60h
62h
64h
66h
68h
70h
72h
74h
76h
78h
x8
Device Geometry Definition
00FDh
0018h
0001h
0002h
0000h
0006h
0000h
0003h
0007h
0000h
0020h
0000h
0000h
0000h
0001h
0007h
0000h
0020h
0000h
0000h
0000h
0000h
0000h
Data
Device Size = 2
Maximum number of bytes in Multiple-byte program or Page= 2
Number of Erase Block Regions
containing contiguous Erase Blocks of the same size.
Erase Block Region 1 Information
Number of Erase Blocks of identical size = 0007h+1
Erase Block Region 1 Information
Block size in Region 1 = 0020h * 256 byte
Erase Block Region 2 Information
Number of Erase Blocks of identical size = 00FDh+1
Erase Block Region 2 Information
Block size in Region 2 = 0100h * 256 byte
Erase Block Region 3 information
Number of Erase Blocks of identical size = 0007h + 1
Erase Block Region 3 information
Block size in region 3 = 0020h * 256 bytes
Erase Block Region 4 information
(x16 only)
Packages
TBGA64
TSOP56
(x8/x16)
Both
Flash Device Interface Code description
(1)
n
in number of bytes
Description
(1)
. It specifies the number of regions
n
M29DW128F
Mbytes
x8, x16
Async.
Kbytes
Kbytes
Kbytes
Value
254
16
64
64
3
8
8
8
8
0

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