M95640-WMN6P STMicroelectronics, M95640-WMN6P Datasheet - Page 33

IC EEPROM 64KBIT 10MHZ 8SOIC

M95640-WMN6P

Manufacturer Part Number
M95640-WMN6P
Description
IC EEPROM 64KBIT 10MHZ 8SOIC
Manufacturer
STMicroelectronics
Datasheets

Specifications of M95640-WMN6P

Format - Memory
EEPROMs - Serial
Memory Type
EEPROM
Memory Size
64K (8K x 8)
Speed
10MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (3.9mm Width)
Organization
8 K x 8
Interface Type
SPI
Maximum Clock Frequency
10 MHz
Access Time
40 ns
Supply Voltage (max)
5.5 V
Supply Voltage (min)
2.5 V
Maximum Operating Current
4 mA
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Operating Supply Voltage
3.3 V, 5 V
Memory Configuration
8192 X 8
Clock Frequency
10MHz
Supply Voltage Range
2.5V To 5.5V
Memory Case Style
SOIC
No. Of Pins
8
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8615-5
M95640-WMN6P

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Manufacturer
Quantity
Price
Part Number:
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Part Number:
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0
M95640, M95640-W, M95640-R, M95640-DR
Table 16.
1. Characterized only, not 100% tested.
Table 17.
1. If the application uses the M95640-R device with 2.5 V < VCC < 5.5 V and -40 °C < TA < +85 °C, please
2. Characterized only, not 100% tested.
3. 0.7 V with the device identified with process letter K.
4. 1.3 V with the device identified with process letter K.
Symbol
Symbol
V
V
I
I
RES
V
RES
V
I
I
V
V
I
V
I
CC0
CC1
V
I
V
I
CC0
CC1
V
refer to
I
CC
LO
I
CC
LO
OH
LI
OL
OH
LI
OL
IH
IL
IH
IL
(1)
(2)
Table 15: DC characteristics (M95640-W, device grade 6)
Input leakage current
Output leakage current
Supply current (Read)
Supply current (Write)
Supply current (Standby
Power mode)
Input low voltage
Input high voltage
Output low voltage
Output high voltage
Internal reset threshold
voltage
Input leakage current
Output leakage current
Supply current (Read)
Supply current (Write)
Supply current (Standby
mode)
Input low voltage
Input high voltage
Output low voltage
Output high voltage
Internal reset threshold
voltage
DC characteristics (M95640-W, device grade 3)
DC characteristics (M95640-R, M95640-DR, device grade 6)
Parameter
Parameter
Doc ID 16877 Rev 15
V
S = V
f
C = 0.1V
f
C = 0.1V
2.5 V < V
S = V
V
I
I
C
C
OL
OH
V
S = V
V
Q = open, f
V
Q = open, f
V
V
V
1.8 V V
1.8 V V
V
V
IN
CC
IN
CC
CC
CC
CC
IN
CC
CC
= 5 MHz, V
= 10 MHz, V
= 1.5 mA, V
= V
= –0.4 mA, V
= V
= V
= 2.5 V
= 1.8 V, C = 0.1V
= 1.8 V, C = 0.1V
= 1.8 V, during t
= 1.8 V, S = V
= 1.8 V, I
= 1.8 V, I
CC
CC
CC
SS
, V
, V
SS
SS
CC
CC
, V
CC
CC
CC
Test condition
or V
OUT
IN
or V
or V
/0.9V
/0.9V
OUT
Test condition
C
C
< 5.5 V, during t
< 2.5 V
< 2.5 V
= V
CC
= 2 MHz
= 5 MHz
CC
OL
OH
= V
CC
CC
CC
CC
= V
CC
CC
SS
= 2.5 V,
CC
= 0.15 mA
= –0.1 mA
= 2.5 V,
SS
= 2.5 V
CC
, Q = open
, Q = open
SS
or V
= 2.5 V
W
or V
,
CC
CC
or V
, S = V
CC
/0.9V
/0.9V
instead of the above table.
CC
CC
W
, S = V
CC
CC
CC
,
,
0.75V
CC
0.8 V
DC and AC parameters
–0.45
1.0
Min.
0.7V
0.8V
(3)
–0.45
CC
CC
Min.
1.0
CC
CC
0.25V
(1)
V
1.65
Max.
CC
± 2
± 2
0.3V
0.3
V
2
2
5
1
Max.
1.65
CC
± 2
± 2
0.4
+1
(4)
3
6
6
2
CC
+1
CC
Unit
Unit
mA
mA
mA
33/48
µA
µA
µA
mA
mA
µA
µA
µA
V
V
V
V
V
V
V
V
V
V

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