MR0A08BVYS35 EverSpin Technologies Inc, MR0A08BVYS35 Datasheet

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MR0A08BVYS35

Manufacturer Part Number
MR0A08BVYS35
Description
IC MRAM 1MBIT 35NS 44TSOP
Manufacturer
EverSpin Technologies Inc
Datasheet

Specifications of MR0A08BVYS35

Format - Memory
RAM
Memory Type
MRAM (Magnetoresistive RAM)
Memory Size
1M (128K x 8)
Speed
35ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 105°C
Package / Case
44-TSOP II
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
819-1001
Everspin Technologies © 2009
FEATURES
CONTENTS
INTRODUCTION
The MR0A08B is a 1,048,576-bit magnetoresistive random access
memory (MRAM) device organized as
131,072 words of 8 bits. The MR0A08B offers SRAM compatible 35
ns read/write timing with unlimited endurance. Data is always non-
volatile for greater than 20-years. Data is automatically protected
on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The
MR0A08B is the ideal memory solution for applications that must permanently store and retrieve critical
data and programs quickly.
The MR0A08B is available in small footprint 400-mil, 44-lead plastic small-outline TSOP type-II package or
8 mm x 8 mm, 48-pin ball grid array (BGA) package with 0.75 mm ball centers. These packages are compat-
ible with similar low-power SRAM products and other non-volatile RAM products.
The MR0A08B provides highly reliable data storage over a wide range of temperatures. The product is of-
fered with commercial temperature (0 to +70 °C), industrial temperature (-40 to +85 °C), and automotive
temperature (-40 to +125 °C) range options.
• Fast 35 ns Read/Write Cycle
• SRAM Compatible Timing, Uses Existing SRAM Controllers Without
• Unlimited Read & Write Endurance
• Data Always Non-volatile for >20-years at Temperature
• One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in
• Replace battery-backed SRAM solutions with MRAM to eliminate
• 3.3 Volt Power Supply
• Automatic Data Protection on Power Loss
• Commercial, Industrial, Automotive Temperatures
• RoHS-Compliant SRAM TSOPII Package
• RoHS-Compliant SRAM BGA Package Shrinks Board Area By Three
1. DEVICE PIN ASSIGNMENT......................................................................... 2
2. ELECTRICAL SPECIFICATIONS................................................................. 4
3. TIMING SPECIFICATIONS.......................................................................... 7
4. ORDERING INFORMATION....................................................................... 12
5. MECHANICAL DRAWING.......................................................................... 13
6. REVISION HISTORY...................................................................................... 15
How to Reach Us.......................................................................................... 15
Redesign
System for Simpler, More Efficient Design
battery assembly improving reliability
Times
1
Document Number: MR0A08B Rev. 2, 6/2009
RoHS
128K x 8 MRAM Memory
MR0A08B

Related parts for MR0A08BVYS35

MR0A08BVYS35 Summary of contents

Page 1

... The MR0A08B provides highly reliable data storage over a wide range of temperatures. The product is of- fered with commercial temperature (0 to +70 °C), industrial temperature (-40 to +85 °C), and automotive temperature (-40 to +125 °C) range options. CONTENTS 1. DEVICE PIN ASSIGNMENT......................................................................... 2 2. ELECTRICAL SPECIFICATIONS................................................................. 4 3. TIMING SPECIFICATIONS.......................................................................... 7 4. ORDERING INFORMATION....................................................................... 12 5. MECHANICAL DRAWING.......................................................................... 13 6. REVISION HISTORY...................................................................................... 15 How to Reach Us.......................................................................................... 15 Everspin Technologies © 2009 128K x 8 MRAM Memory RoHS 1 Document Number: MR0A08B Rev. 2, 6/2009 MR0A08B ...

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... No Connection - Pin 2, 40, 41, 43 (TSOPII), Ball D3, H1, H6, G2 (BGA) Reserved For Future Expansion Everspin Technologies © 2009 Figure 1.1 Block Diagram OUTPUT ENABLE ROW COLUMN DECODER DECODER 8 SENSE AMPS 128k x 8 BIT MEMORY ARRAY FINAL 8 WRITE DRIVERS WRITE ENABLE Table 1.1 Pin Functions 2 Document Number: MR0A08B Rev. 2, 6/2009 MR0A08B 8 8 ...

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DEVICE PIN ASSIGNMENT Figure 1.2 Pin Diagrams for Available Packages (Top View DQ0 10 DQ1 DQ2 ...

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ELECTRICAL SPECIFICATIONS Absolute Maximum Ratings This device contains circuitry to protect the inputs against damage caused by high static voltages or electric fields; however advised that normal precautions be taken to avoid application of any voltage greater than maximum rated voltages to these high-impedance (Hi-Z) circuits. The device also contains protection against external magnetic fields. Precautions should be taken to avoid application of any magnetic field more intense than the maximum field intensity specified in the maximum ratings. Parameter Supply voltage 2 Voltage on an pin 2 Output current per pin Package power dissipation Temperature under bias MR0A08B (Commercial) MR0A08BC (Industrial) MR0A08BM (Automotive) Storage Temperature Lead temperature during solder (3 minute max) Maximum magnetic field during write MR0A08B (All Temperatures) Maximum magnetic field during read or standby Permanent device damage may occur if absolute maximum ratings are exceeded. Functional opera- 1 tion should be restricted to recommended operating conditions. Exposure to excessive voltages or magnetic fields could affect device reliability. All voltages are referenced Power dissipation capability depends on package characteristics and use environment. 3 Everspin Technologies © 2009 Table 2.1 ...

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... Automotive temperature profile assumes 10% duty cycle at maximum temperature (2-years out of 20-year life) iv Power Up and Power Down Sequencing MRAM is protected from write operations whenever V there is a startup time before read or write operations can start. This time allows memory power supplies to stabilize. The E and W control signals should track V high for the startup time. In most systems, this means that these signals should be pulled up with a resis- tor so that signal remains high if the driving signal is Hi-Z during power up. Any logic that drives E and W should hold the signals high with a power-on reset signal for longer than the startup time. During power loss or brownout where V observed when power returns above V V ...

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Electrical Specifications Parameter Input leakage current Output leakage current Output low voltage ( mA +100 μA) OL Output high voltage ( mA -100 μA) OL Parameter AC active supply current - read modes ( mA max) OUT DD AC active supply current - write modes (V = max) DD MR0A08B (Commercial) MR0A08BC (Industrial) MR0A08BM (Automotive) AC standby current (V = max ...

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TIMING SPECIFICATIONS Parameter Address input capacitance Control input capacitance Input/Output capacitance f = 1.0 MHz 3 °C, periodically sampled rather than 100% tested Parameter Logic input timing measurement reference level Logic output timing measurement reference level Logic input pulse levels Input rise/fall time Output load for low and high impedance parameters Output load for all other timing parameters Output Everspin Technologies © 2009 Table 3.1 Capacitance Symbol Table 3.2 AC Measurement Conditions Figure 3.1 Output Load Test Low and ...

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Timing Specifications Read Mode Parameter Read cycle time Address access time Enable access time 2 Output enable access time Output hold from address change Enable low to output active 3 Output enable low to output active Enable high to output Hi-Z 3 Output enable high to output Hi high for read cycle. Power supplies must be properly grounded and decoupled, and bus contention conditions must be 1 minimized or eliminated during read or write cycles. Addresses valid before or at the same time E goes low. 2 This parameter is sampled and not 100% tested. Transition is measured ±200 mV from the steady-state voltage. 3 Everspin Technologies © 2009 Table 3.3 Read Cycle Timing Symbol t AVAV t AVQV t ELQV t GLQV ...

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Timing Specifications Parameter Write cycle time 2 Address set-up time Address valid to end of write (G high) Address valid to end of write (G low) Write pulse width (G high) Write pulse width (G low) Data valid to end of write Data hold time Write low to data Hi-Z 3 Write high to output active 3 Write recovery time All write occurs during the overlap of E low and W low. Power supplies must be properly grounded and decoupled and bus 1 contention conditions must be minimized or eliminated during read and write cycles goes low at the same time or after W goes low, the output will remain in a high impedance state. After has been brought high, the signal must remain in steady-state high for a minimum of 2 ns. The minimum time between E being asserted low in one cycle to E being asserted low in a subsequent cycle is the same as the minimum cycle time allowed for the device. All write cycle timings are referenced from the last valid address to the first transition address. 2 This parameter is sampled and not 100% tested. Transition is measured ±200 mV from the steady-state voltage. At any given 3 voltage or temperate, t (max) < t WLQZ Everspin Technologies © 2009 Table 3.4 Write Cycle Timing 1 (W Controlled) ...

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Timing Specifications Parameter Write cycle time 2 Address set-up time Address valid to end of write (G high) Address valid to end of write (G low) Enable to end of write (G high) Enable to end of write (G low) 3 Data valid to end of write Data hold time Write recovery time All write occurs during the overlap of E low and W low. Power supplies must be properly grounded and decoupled and bus 1 contention conditions must be minimized or eliminated during read and write cycles goes low at the same time or after W goes low, the output will remain in a high impedance state. After has been brought high, the signal must remain in steady-state high for a minimum of 2 ns. The minimum time between E being asserted low in one cycle to E being asserted low in a subsequent cycle is the same as the minimum cycle time allowed for the device. All write cycle timings are referenced from the last valid address to the first transition address goes low at the same time or after W goes low, the output will remain in a high-impedance state goes high at the 3 same time or before W goes high, the output will remain in a high-impedance state. Everspin Technologies © 2009 Table 3.5 Write Cycle Timing 2 (E Controlled) Symbol t AVAV t ...

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Timing Specifications Table 3.6 Write Cycle Timing 3 (Shortened t Parameter Write cycle time 2 Address set-up time Address valid to end of write (G high) Address valid to end of write (G low) Write pulse width Data valid to end of write Data hold time Enable recovery time Write recovery time 3 Write to enable recovery time 3 All write occurs during the overlap of E low and W low. Power supplies must be properly grounded and decoupled and bus 1 contention conditions must be minimized or eliminated during read and write cycles goes low at the same time or after W goes low, the output will remain in a high impedance state. After has been brought high, the signal must remain in steady-state high for a minimum of 2 ns. The minimum time between E being asserted low in one cycle to E being asserted low in a subsequent cycle is the same as the minimum cycle time allowed for the device. All write cycle timings are referenced from the last valid address to the first transition address goes low at the same time or after W goes low the output will remain in a high impedance state goes high at the same 3 time or before W goes high the output will remain in a high impedance state. E must be brought high each cycle. Table 3.6 Write Cycle Timing ...

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ORDERING INFORMATION Part Number MR0A08BYS35 MR0A08BCYS35 MR0A08BMYS35 1 MR0A08BYS35R MR0A08BCYS35R MR0A08BMYS35R MR0A08BMA35 MR0A08BCMA35 MR0A08BMMA35 1 The automotive temperature grade parts are classified as Preliminary. 1 Everspin Technologies © 2009 Figure 4.1 Part Numbering System Table 4.1 Available Parts Description 3.3 V 128Kx8 MRAM 44-TSOP ...

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MECHANICAL DRAWING 1. Dimensions and tolerances per ASME Y14.5M - 1994. 2. Dimensions in Millimeters. 3. Dimensions do not include mold protrusion. 4. Dimension does not include DAM bar protrusions. DAM Bar protrusion shall not cause the lead width to exceed 0.58. Everspin Technologies © 2009 Figure 5.1 TSOP-II Print Version Not To Scale 13 Document Number: MR0A08B Rev. 2, 6/2009 MR0A08B ...

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Mechanical Drawings BOTTOM VIEW 1. Dimensions in Millimeters. 2. Dimensions and tolerances per ASME Y14.5M - 1994. 3. Maximum solder ball diameter measured parallel to DATUM A 4. DATUM A, the seating plane is determined by the spherical crowns of the solder balls. 5. Parallelism measurement shall exclude any effect of mark on top surface of package. Everspin Technologies © 2009 Figure 5.2 FBGA TOP VIEW Print Version Not To Scale 14 MR0A08B SIDE VIEW Document Number: MR0A08B Rev. 2, 6/2009 ...

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REVISION HISTORY Revision Date 0 Sep 12, 2008 Initial Advance Information Release 1 May 8, 2009 2 June 18, 2009 Unless Otherwise Noted, This is a Production Product - This product conforms to specifications per the terms of the Everspin standard warranty. The product has completed Everspin internal ...

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