MR0A08BVYS35 EverSpin Technologies Inc, MR0A08BVYS35 Datasheet - Page 6

• Manufacturer Part Number: MR0A08BVYS35
• Description: IC MRAM 1MBIT 35NS 44TSOP
• Manufacturer: EverSpin Technologies Inc

Specifications of MR0A08BVYS35

• Format - Memory: RAM
• Memory Type: MRAM (Magnetoresistive RAM)
• Memory Size: 1M (128K x 8)
• Speed: 35ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 105°C
• Package / Case: 44-TSOP II
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 819-1001

Everspin Technologies © 2009
Electrical Specifications
1
Parameter
Input leakage current
Output leakage current
Output low voltage
Output high voltage
Parameter
AC active supply current - read modes
AC active supply current - write modes
AC standby current
CMOS standby current
All active current measurements are measured with one address transition per cycle and at minimum cycle time.
(I
(I
(I
(I
(I
(V
MR0A08B (Commercial)
MR0A08BC (Industrial)
MR0A08BM (Automotive)
(V
no other restrictions on other inputs
(E ≥ V
(V
OL
OL
OL
OL
OUT
DD
DD
DD
= +4 mA)
= +100 μA)
= -4 mA)
= -100 μA)
= 0 mA, V
= max)
= max, E = V
= max, f = 0 MHz)
DD
- 0.2 V and V
DD
= max)
IH
)
In
≤
V
SS
+ 0.2 V or ≥ V
Table 2.4 Power Supply Characteristics
Symbol
I
I
V
V
lkg(I)
lkg(O)
Table 2.3 DC Characteristics
1
OL
OH
1
DD
- 0.2 V)
Min
-
-
-
2.4
V
DD
6
- 0.2
Symbol
I
I
I
I
DDR
DDW
SB1
SB2
Document Number: MR0A08B Rev. 2, 6/2009
Typical
-
-
-
-
Typical
25
55
55
TBD
6
5
Max
±1
±1
0.4
V
-
Max
30
65
70
TBD
7
6
SS
MR0A08B
+ 0.2
Unit
μA
μA
V
V
Unit
mA
mA
mA
mA