ICE2QR4765 Infineon Technologies, ICE2QR4765 Datasheet

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ICE2QR4765

Manufacturer Part Number
ICE2QR4765
Description
IC CTRLR SMPS QUASI-RESON 8DIP
Manufacturer
Infineon Technologies
Series
CoolSET®-Q1r
Datasheet

Specifications of ICE2QR4765

Output Isolation
Isolated
Frequency Range
39 ~ 65 kHz
Voltage - Input
10.5 ~ 27 V
Voltage - Output
650V
Power (watts)
30W
Operating Temperature
-25°C ~ 130°C
Package / Case
8-DIP (0.300", 7.62mm)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ICE2QR4765
Manufacturer:
INFINEON
Quantity:
796
D a t a s h e e t , V e r s i o n 2 . 1 , F e b r u a r y 5 , 2 0 1 0
®
C o o l S E T
-Q1
ICE2QR4765
O f f - L i n e S M P S Q u a s i - R e s o n a n t
P W M C o n t r o l l e r w i t h i n t e g r a t e d
6 5 0 V S t a r t u p C e l l / D e p l e t i o n
®
C o o l M O S
I n D I P - 8
P o w e r M a n a g e m e n t & S u p p l y
N e v e r
s t o p
t h i n k i n g .

Related parts for ICE2QR4765

ICE2QR4765 Summary of contents

Page 1

... ICE2QR4765 & ® -Q1 ® ...

Page 2

... CoolSET -Q1 ICE2QR4765 Revision History: Previous Version: Page Subjects (major changes since last revision) page12 maximum of junction temperature Tj changed to 150 °C page13 maximum of junction temperature Tjcon changed to 130 °C page 16 minimum and maximum value for over temperature protection of Tjcon are added ...

Page 3

... ZC1 R D VCC VCC C VCC Drain VCC Startup Cell ® Depl. CoolMOS Power Cell ® CoolSET -Q1 Marking DSon 650V 4.7 =50°C, T =125°C and without copper area as heat sink CoolSET ICE2QR4765 ® In PG-DIP-8-6 ® -Q1 series (ICE2QRxx65) is the first ® -Q1 series has ...

Page 4

... PWM Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 4.3.4 Current Sense .14 4.3.5 Soft Start .14 4.3.6 Foldback Point Correction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 4.3.7 Digital Zero Crossing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 4.3.8 Active Burst Mode .15 4.3.9 Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 ® 4.3.10 CoolMOS Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 5 Temperature derating curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 6 Outline Dimension . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18 Version 2.1 4 ® CoolSET - Q1 ICE2QR4765 Page February 5, 2010 ...

Page 5

... Drain pin is the connection to the drain of the internal 6 n.c. Depl. CoolMOS VCC (Power supply) VCC pin is the positive supply of the IC. The operating 5 Drain range is between V GND (Ground) This is the common ground of the controller. 5 CoolSET ICE2QR4765 Pin Functionality . Internally, this pin is FB with decreasing load during ® ) ®. and V . ...

Page 6

... Representative Blockdiagram Figure 2 Representative Block diagram Version 2.1 Representative Blockdiagram 6 ® CoolSET - Q1 ICE2QR4765 February 5, 2010 ...

Page 7

... Functional Description 3.1 VCC Pre-Charging and Typical VCC Voltage During Start-up In ICE2QR4765, a startup cell is integrated into the ® depletion CoolMOS . As shown in Figure 2, the start cell consists of a high voltage device and a controller, whereby the high voltage device is controlled by the controller. The startup cell provides a pre-charging of ...

Page 8

... Once higher than V , but FBZH always lower than V FBR1 Once higher than V FBR1 In the ICE2QR4765, the number of zero crossing is limited to 7. Therefore, the counter varies between 1 and 7, and any attempt beyond this range is ignored. When V exceeds V voltage, the up/down counter FB FBR1 is initialised order to allow the system to react rapidly to a sudden load increase ...

Page 9

... To keep a constant maximum input power of the converter, the Once the FB , the output flip-flop FB and the [4] 9 CoolSET ICE2QR4765 Functional Description Current Limitation . By means integrated in the current LEB ) which could occur if CSSW is integrated in CSSW Foldback Point Correction voltage limit according CS ...

Page 10

... V LB maximum current can now be provided to stabilize V In addition, the up/down counter will be set CoolSET ICE2QR4765 Functional Description Entering Active Burst Mode Operation Active Burst Mode ). BEB During Active Burst Mode Operation starts to decrease due to the ...

Page 11

... VCC voltage is charged to 18V then the startup cell is shut down again and repeats the previous procedure. There is also an maximum on time limitation inside t ICE2QR4765. Once the gate voltage is high longer than turned off immediately. OnMAx t 11 ® ...

Page 12

... VCC ZCMAX thJA V - ESD Symbol Limit Values min. max VCC VCCoff VCCOVP 12 CoolSET ICE2QR4765 Electrical Characteristics Unit Remarks max. °C 650 V T =110 j °C 1. =125 j 0. 5.0 V 5 °C 150 Controller & CoolMOS °C 150 90 K/W ...

Page 13

... VCClatch I - 500 VCCburst V 17.0 18.0 VCCon V 9.8 10.5 VCCoff V - 7.5 VCChys Symbol Limit Values min. typ. V 4.80 5.00 REF 13 CoolSET ICE2QR4765 Electrical Characteristics °C Limtied by over temperature protection ° assumed. CC Unit Test Condition max. µA 550 V =V VCC VCCon - VCC - VCC ...

Page 14

... SS_S 1.76 SS1 0.56 SS_S Symbol Limit Values min. typ. I 0.35 0.5 ZC_FS I 1.3 1.7 ZC_LS V - 0.66 CSMF 14 CoolSET ICE2QR4765 Electrical Characteristics Unit Test Condition max. 33 kΩ µs 41 Unit Test Condition max. 1.09 V 460 ns 0.39 V Unit Test Condition max ...

Page 15

... ZCSL t 48 COUNT OffMax Symbol Limit Values min. typ 1.25 FBEB N 7 ZC_ABM BEB V - 4.5 FBLB V - 3.6 FBBOn V 3.0 FBBOff 15 CoolSET ICE2QR4765 Electrical Characteristics Unit Test Condition max. 170 µs 4.5 V > ZCRS µ < ZCRS µs 57.5 Unit Test Condition max. ...

Page 16

... CSSW T 130 140 jCon Symbol Limit Values min. typ. V 650 - (BR)DSS R - 4.7 DSon1 10 4.75 o(er rise fall 16 CoolSET ICE2QR4765 Electrical Characteristics 65 kHz - Unit Test Condition max. 26 3.84 V µs 1. 150 °C Unit Test Condition max 110°C j Ω 5. 25° Ω ...

Page 17

... Typical CoolMOS Figure 9 Safe Operating Area(SOA) curve for ICE2QR4765 Figure 10 Power dissipation; P Version 2.1 Typical CoolMOS ® Performance Characteristic =f(T ) tot a 17 ® CoolSET ICE2QR4765 ® Performance Characteristic February 5, 2010 - Q1 ...

Page 18

... Figure 11 Drain-source breakdown voltage; V Version 2.1 ® Typical CoolMOS Performance Characteristic =f(T ) BR(DSS ® CoolSET - Q1 ICE2QR4765 February 5, 2010 ...

Page 19

... Input Power curve Vin=230Vac;Pin=f(T Version 2.1 13). The curves are derived based on a typical =125° also considered bient Tem perature bient Tem perature ® CoolSET - Q1 ICE2QR4765 Input power curve voltage(Figure 85 95 105 115 125 105 115 125 0 C] February 5, 2010 12), ...

Page 20

... Outline Dimension PG-DIP-8-6 / PG-DIP-8-9 (Leadfree Plastic Dual In-Line Outline) Figure 14 PG-DIP-8-6, PG-DIP-8-9 (Pb-free lead plating Plastic Dual-in-Line Outline) Dimensions in mm Version 2.1 Outline Dimension 20 ® CoolSET - Q1 ICE2QR4765 February 5, 2010 ...

Page 21

... Geben Sie uns die Chance, hohe Leistung durch umfassende Qualität zu beweisen. Wir werden Sie überzeugen Published by Infineon Technologies AG Quality takes on an allencompassing significance at Semiconductor Group. For us it means living up to each and every one of your demands in the best possible way are not only concerned with product quality ...

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