SI8235BB-C-IMR Silicon Laboratories Inc, SI8235BB-C-IMR Datasheet - Page 13

• Manufacturer Part Number: SI8235BB-C-IMR
• Description: IC ISODRIVER DUAL LOW SIDE 14LGA
• Manufacturer: Silicon Laboratories Inc

Specifications of SI8235BB-C-IMR

• Configuration: Low-Side
• Input Type: Non-Inverting
• Delay Time: 60ns
• Current - Peak: 4A
• Number Of Configurations: 2
• Number Of Outputs: 2
• Voltage - Supply: 6.5 V ~ 24 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 14-LGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• High Side Voltage - Max (bootstrap): -

Table 6. IEC 60747-5-2 Insulation Characteristics*
Table 7. IEC Safety Limiting Values
Maximum Working Insulation
Voltage
Input to Output Test Voltage
Transient Overvoltage
Pollution Degree (DIN VDE
0110, Table 1)
Insulation Resistance at T
V
*Note: Maintenance of the safety data is ensured by protective circuits. The Si823x provides a climate classification of
Parameter
Case Temperature
Safety Input Current
Device Power
Dissipation
Notes:
IO
1. Maximum value allowed in the event of a failure. Refer to the thermal derating curve in Figures 6 and 7.
2. The Si82xx is tested with V
= 500 V
40/125/21.
square wave.
Parameter
2
Symbol
P
T
I
S
S
D
S
,
105 °C/W (NB SOIC-16, 14 LD LGA),
DDI

Symbol
50 °C/W (14 LD LGA w/ Pad)
JA
V
V
V
IORM
IOTM
R
= 5.5 V, V
T
= 100 °C/W (WB SOIC-16),
PR
S
J
V
= 150 °C, T
DDA
Test Condition
V
1
DDI
(V
= V
Partial Discharge < 5
DDA
IORM
= 5.5 V,
Production Test,
DDB
Test Condition
= V
Method b1
t
A
t = 60 sec
m
= 24 V,
x 1.875 = V
= 25 °C
100%
= 1 sec,
DDB
pC)
Rev. 1.1
= 24 V, T
PR
J
,
= 150 ºC, C
SOIC-16
WB
150
SOIC-16
1.2
50
1375
6000
>10
WB
891
2
9
L
SOIC-16
= 100 pF, input 2 MHz 50% duty cycle
150
NB
1.2
Characteristic
50
NB SOIC-16
14 LD LGA
1050
4000
>10
560
2
LD LGA
9
150
1.2
50
14
14 LD LGA
w/ Pad
2650
>10
LGA w/
373
700
14 LD
Pad
2
150
100
1.2
Si823x
9
V peak
V peak
V peak
Unit
Unit
mA
°C
W

13