SI8235BB-C-IMR Silicon Laboratories Inc, SI8235BB-C-IMR Datasheet - Page 6

• Manufacturer Part Number: SI8235BB-C-IMR
• Description: IC ISODRIVER DUAL LOW SIDE 14LGA
• Manufacturer: Silicon Laboratories Inc

Specifications of SI8235BB-C-IMR

• Configuration: Low-Side
• Input Type: Non-Inverting
• Delay Time: 60ns
• Current - Peak: 4A
• Number Of Configurations: 2
• Number Of Outputs: 2
• Voltage - Supply: 6.5 V ~ 24 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 14-LGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• High Side Voltage - Max (bootstrap): -

Si823x
2. Electrical Specifications
Table 1. Electrical Characteristics
4.5 V < VDDI < 5.5 V, VDDA = VDDB = 12 V or 15 V. TA = –40 to +125 °C. Typical specs at 25 °C
6
Parameter
DC Specifications
Input-side Power Supply
Voltage
Driver Supply Voltage
Input Supply Quiescent
Current
Output Supply Quiescent
Current
Input Supply Active Current
Output Supply Active Current
Input Pin Leakage Current
Input Pin Leakage Current
Logic High Input Threshold
Logic Low Input Threshold
Input Hysteresis
Logic High Output Voltage
Logic Low Output Voltage
Output Short-Circuit Pulsed
Sink Current
Output Short-Circuit Pulsed
Source Current
Output Sink Resistance
Output Source Resistance
Notes:
1. VDDA = VDDB = 12 V for 5, 8, and 10 V UVLO devices; VDDA = VDDB = 15 V for 12.5 V UVLO devices.
2. TDD is the minimum overlap time without triggering overlap protection (Si8230/1/3/4 only).
3. The largest RDT resistor that can be used is 220 k.
VDDA, VDDB
VOAL, VOBL
R
IOA(SCH),
IVIA, IVIB,
IDISABLE
IOA(SCL),
IOB(SCH)
ON(SOURCE)
IOB(SCL)
R
IDDA(Q),
IDDB(Q)
Symbol
IDDI(Q)
VOAH,
VI
VOBH
ON(SINK)
IPWM
IDDO
VDDI
IDDI
VIH
VIL
HYST
1
GNDA, and VDDB and GNDB
Voltage between VDDA and
(See “6. Ordering Guide” )
Si8233/4/5/6, Figure 4
Si8233/4/5/6, Figure 5
PWM freq = 500 kHz
PWM freq = 500 kHz
Si8230/1/2, Figure 4
Si8230/1/2, Figure 5
Current per channel
Si8230/32/33/35/36
Rev. 1.1
IOA, IOB = –1 mA
Test Conditions
IOA, IOB = 1 mA
Si8233/4/5/6
Si8233/4/5/6
Si8230/1/2
Si8230/1/2
Si8231/34
/VDDB)
— 0.04
(VDDA
Min
–10
–10
400
4.5
6.5
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.25
Typ
450
2.5
3.6
0.5
4.0
2.0
5.0
1.0
2.7
—
—
—
—
—
—
15
—
—
—
2
2
Max
0.04
+10
+10
5.5
3.0
0.8
24
—
—
—
—
—
—
—
—
—
—
—
—
—
3
3
Units
µA dc
µA dc
mA
mA
mA
mA
mA
mV
V
V
V
V
V
V
A
