MCZ33883EG Freescale Semiconductor, MCZ33883EG Datasheet - Page 13

• Manufacturer Part Number: MCZ33883EG
• Description: IC PRE-DRIVER FULL BRIDGE 20SOIC
• Manufacturer: Freescale Semiconductor
• Type: High Side/Low Sider

Specifications of MCZ33883EG

• Configuration: H Bridge
• Input Type: Non-Inverting
• Delay Time: 200ns
• Current - Peak: 2A
• Number Of Configurations: 1
• Number Of Outputs: 4
• Voltage - Supply: 5.5 V ~ 55 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (7.5mm Width)
• Rise Time: 180 ns
• Fall Time: 180 ns
• Supply Voltage (min): 5.5 V
• Supply Current: 2.2 mA
• Maximum Power Dissipation: 1250 mW
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Bridge Type: H Bridge
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• High Side Voltage - Max (bootstrap): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

TURN-ON
capacitor C
follows:
Where Q
current for rise time.
Analog Integrated Circuit Device Data
Freescale Semiconductor
For turn-on, the current required to charge the gate source
V
GATE
GATE_HS
GATE_LS
g
is power MOSFET gate charge and t
iss
OFF
Flyback spike charges low-
Causes increased uncon-
trolled turn-on of low-side
side gate via C
I
in the specified time can be calculated as
current I
rss
Driver Requirement:
Low Resistive Gate-
Source Path During
I
P
C
C
= Q
C
C
rss
iss
rss
iss
OFF-State
MOSFET.
g
rss
/ t
r
up to 2.0 A.
= 80 nC / 80 ns ≈ 1.0 A
rss
V
BAT
charge
L1
GATE_HS
GATE_LS
I
LOAD
OFF
Figure 7. OFF-State Driver Requirement
Flyback spike pulls down
Sink Current Capability
Delays turn-off of high-
OFF-State. High Peak
high-side source V
Driver Requirement:
Low Resistive Gate-
Source Path During
C
C
C
C
rss
iss
iss
rss
side MOSFET.
r
is peak
OPERATIONAL MODES
V
BAT
GS
L1
.
I
GATE_HS
LOAD
GATE_LS
TURN-OFF
way as for turn-on, with the exception that peak current for fall
time, t
the MOSFET, various application-related switching scenarios
must be considered. These scenarios are presented in
Figure
resistive path between gate and source is implemented
during the OFF-state.
The peak current for turn-off can be obtained in the same
In addition to the dynamic current required to turn off or on
Flyback spike charges low-
OFF
Delays turn-off of low-side
side gate via C
High Peak Sink Current
current I
Driver Requirement:
f
C
C
, is substituted for t
C
C
7. In order to withstand high dV/dt spikes, a low
rss
iss
rss
iss
Capability
MOSFET.
rss
up to 2.0 A.
I
P
V
rss
= Q
BAT
charge
g
/ t
V
-V
f
GATE
L1
= 80 nC / 80 ns ≈ 1.0 A
DRN
r
:
FUNCTIONAL DEVICE OPERATION
I
LOAD
GATE_HS
GATE_LS
OFF
Causes increased uncon-
trolled turn-on of high-side
Flyback spike pulls down
high-side source V
Driver Requirement:
Low Resistive Gate-
Source Path During
C
OPERATIONAL MODES
C
C
C
iss
iss
rss
rss
OFF-State
V
BAT
GS
L1
.
33883
I
LOAD
13