MCZ33937EK Freescale Semiconductor, MCZ33937EK Datasheet - Page 25

• Manufacturer Part Number: MCZ33937EK
• Description: IC PRE-DRIVER 3PHASE 54-SOIC
• Manufacturer: Freescale Semiconductor
• Series: SMARTMOS™r

Specifications of MCZ33937EK

• Configuration: 3 Phase Bridge
• Input Type: Non-Inverting
• Delay Time: 265ns
• Current - Peak: 600mA
• Number Of Configurations: 1
• Number Of Outputs: 3
• High Side Voltage - Max (bootstrap): 15V
• Voltage - Supply: 8 V ~ 40 V
• Operating Temperature: -40°C ~ 135°C
• Mounting Type: Surface Mount
• Package / Case: 54-SOIC (7.5mm Width) Exposed Pad, 54-eSOIC, 54-HSOIC
• Product: H-Bridge Drivers
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

and off the Low Side FET.. A low-impedance drive ensures
transient currents do not overcome an off-state driver and
allow pulses of current to flow in the external FET. This output
has also been designed to resist the influence of negative
currents.
PHASE C HIGH SIDE SOURCE (PC_HS_S)
FET is the reference voltage for the gate drive on the High
Side FET and also the low voltage end of the bootstrap
capacitor.
PHASE C HIGH SIDE GATE (PC_HS_G)
FET. This pin provides the gate bias to turn the external FET
on or off. The gate voltage is limited to about 15 V above the
FET source voltage. A low-impedance drive is used, ensuring
transient currents do not overcome an off-state driver and
allow pulses of current to flow in the external FETs. This
output has also been designed to resist the influence of
negative currents.
PHASE C BOOTSTRAP (PC_BOOT)
capacitor connected between PC_HS_S and this pin
provides the gate voltage and current to drive the external
FET gate. Typically, the boostrap capacitor selection is 10 to
20 times the gate capacitance. The voltage across this
capacitor is limited to about 15 V. Use the 33937A to avoid
the CAUTION on page
than 100 nF.
PHASE B LOW SIDE SOURCE (PB_LS_S)
gate currents from the Low Side FET. Best performance is
realized by connecting this node directly to the source of the
Low Side FET for phase B.
PHASE B LOW SIDE GATE (PC_LS_G)
It provides high current through a low impedance to turn on
and off the Low Side FET. A low-impedance drive ensures
transient currents do not overcome an off-state driver and
allow pulses of current to flow in the external FET. This output
has also been designed to resist the influence of negative
currents.
PHASE B HIGH SIDE SOURCE (PB_HS_S)
FET is the reference voltage for the gate drive on the High
Side FET and also the low voltage end of the bootstrap
capacitor.
PHASE B HIGH SIDE GATE (PB_HS_G)
FET. This pin provides the gate bias to turn the external FET
Analog Integrated Circuit Device Data
Freescale Semiconductor
The source connection for the phase C High Side output
This is the gate drive for the phase C High Side output
This is the bootstrap capacitor connection for phase C. A
The phase B Low Side source is the pin used to return the
This is the gate drive for the phase B Low Side output FET.
The source connection for the phase B High Side output
This is the gate drive for the phase B High Side output
28
for bootstrap capacitances greater
on or off. The gate voltage is limited to about 15 V above the
FET source voltage. A low-impedance drive is used, ensuring
transient currents do not overcome an off-state driver and
allow pulses of current to flow in the external FETs. This
output has also been designed to resist the influence of
negative currents.
PHASE B BOOTSTRAP (PB_BOOT)
capacitor connected between PC_HS_S and this pin
provides the gate voltage and current to drive the external
FET gate. Typically, the boostrap capacitor selection is 10 to
20 times the gate capacitance. The voltage across this
capacitor is limited to about 15 V. Use the 33937A to avoid
the CAUTION on page
than 100 nF.
PHASE A LOW SIDE SOURCE (PA_LS_S)
gate currents from the Low Side FET. Best performance is
realized by connecting this node directly to the source of the
Low Side FET for phase A.
PHASE A LOW SIDE GATE (PA_LS_G)
It provides high current through a low impedance to turn on
and off the Low Side FET. A low-impedance drive ensures
transient currents do not overcome an off-state driver and
allow pulses of current to flow in the external FET. This output
has also been designed to resist the influence of negative
currents.
PHASE A HIGH SIDE SOURCE (PA_HS_S)
FET is the reference voltage for the gate drive on the High
Side FET and also the low voltage end of the bootstrap
capacitor.
PHASE A HIGH SIDE GATE (PA_HS_G)
FET. This pin provides the gate bias to turn the external FET
on or off. The gate voltage is limited to about 15 V above the
FET source voltage. A low-impedance drive is used, ensuring
transient currents do not overcome an off-state driver and
allow pulses of current to flow in the external FETs. This
output has also been designed to resist the influence of
negative currents.
PHASE A BOOTSTRAP (PA_BOOT)
capacitor connected between PC_HS_S and this pin
provides the gate voltage and current to drive the external
FET gate. Typically, the boostrap capacitor selection is 10 to
20 times the gate capacitance. The voltage across this
capacitor is limited to about 15 V. Use the 33937A to avoid
This is the bootstrap capacitor connection for phase B. A
The phase A Low Side source is the pin used to return the
This is the gate drive for the phase A Low Side output FET.
The source connection for the phase A High Side output
This is the gate drive for the phase A High Side output
This is the bootstrap capacitor connection for phase A. A
28
for bootstrap capacitances greater
FUNCTIONAL DESCRIPTIONS
INTRODUCTION
33937
25