TC4467MJD Microchip Technology, TC4467MJD Datasheet - Page 10

• Manufacturer Part Number: TC4467MJD
• Description: IC MOSFET DVR QUAD NAND 14CDIP
• Manufacturer: Microchip Technology
• Type: Microcontrollerr

Specifications of TC4467MJD

• Configuration: Low-Side
• Input Type: NAND
• Delay Time: 40ns
• Current - Peak: 1.2A
• Number Of Configurations: 4
• Number Of Outputs: 4
• Voltage - Supply: 4.5 V ~ 18 V
• Operating Temperature: -55°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: 14-CDIP (0.300", 7.62mm)
• Rise Time: 25 ns
• Fall Time: 25 ns
• Supply Voltage (min): 4.5 V
• Supply Current: 4 mA
• Maximum Power Dissipation: 840 mW
• Maximum Operating Temperature: + 125 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Number Of Drivers: 4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• High Side Voltage - Max (bootstrap): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

TC4467/TC4468/TC4469
A
referenced loads is a function of duty cycle, load
current and output voltage. The power dissipation is
EQUATION
Quiescent power dissipation depends on input signal
duty cycle. Logic HIGH outputs result in a lower power
dissipation mode, with only 0.6 mA total current drain
(all devices driven). Logic LOW outputs raise the
current to 4 mA maximum. The quiescent power
dissipation is:
EQUATION
Transition power dissipation arises in the complimen-
tary configuration (TC446X) because the output stage
N-channel and P-channel MOS transistors are ON
simultaneously for a very short period when the output
changes.
approximately:
FIGURE 4-1:
DS21425B-page 10
1 µF Film
resistive-load-caused
1A
1B
2A
2B
3A
3B
4A
4B
D
V
I
I
I
D
V
L
H
L
O
S
=
=
=
=
=
=
=
1
2
3
4
5
6
8
9
Duty Cycle
Load Current
Duty Cycle
Quiescent Current with all outputs HIGH
(0.6 mA max.)
Quiescent Current with all outputs LOW
(4 mA max.)
Supply Voltage
Device Output Voltage
P
The
Q
=
V
V
transition
7
P
S
DD
14
L
D I
Switching Time Test Circuit.
=
H
DV
+
0.1 µF Ceramic
dissipation
O
13
12
11
10
I
1 D
power
L
–
I
L
dissipation
V
470 pF
OUT
for
supply-
Output
is
Input
(A, B)
V
+5 V
0V
DD
0 V
10%
EQUATION
Package power dissipation is the sum of load,
quiescent and transition power dissipations. An
example shows the relative magnitude for each term:
Maximum operating temperature is:
EQUATION
Note:
P
T
C
V
D
f
JA
J
D
S
=
t
=
=
D1
=
Input: 100 kHz,
square wave,
t
=
=
=
=
=
RISE
200 kHz
=
(83.3 C/W) 14-pin plastic package
1000 pF Capacitive Load
50%
Maximum allowable junction temperature
(+150 C
Ambient operating temperature should not
exceed +85°C for "EJD" device or +125°C
for "MJD" device.
15 V
Package Power Dissipation
P
45mW
110mW
90%
Junction-to-ambient thernal resistance
L
= t
+
T
10%
P
J
P
FALL
T
–
Q
+
=
+
35mW
JA
P
fV
T
t
P
10 nsec
R
s
D
10
2002 Microchip Technology Inc.
+
=
30mW
10
141 C
–
t
90%
D2
9
10%
90%
t
F