BSP76 E6327 Infineon Technologies, BSP76 E6327 Datasheet - Page 3

• Manufacturer Part Number: BSP76 E6327
• Description: MOSFET 42V 1.4A N-CHAN SOT223
• Manufacturer: Infineon Technologies
• Series: HITFET®r
• Type: Low Sider

Specifications of BSP76 E6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 150 mOhm
• Current - Output / Channel: 1.8A
• Current - Peak Output: 7.5A
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• On Resistance (max): 0.19 Ohms
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Maximum Power Dissipation: 3800 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BSP76-E6327; BSP76-E6327INTR; BSP76-E6327INTR; BSP76E6327INTR; BSP76E6327NT; BSP76E6327NTINTR; BSP76E6327NTINTR; BSP76E6327T; BSP76E6327T; BSP76E6327TINTR; BSP76E6327TINTR; BSP76E6327XT; SP000011146; SP000292889; SP000379611

1 Device switched on into existing short circuit (see diagram Determination of I
and a short circuit occurs, these values might be exceeded for max. 50 µs.
5 not subject to production test, calculated by R
Datasheet
Electrical Characteristics
Parameter
at T
Characteristics
Drain source clamp voltage
T
Off-state drain current
T
T
Input threshold voltage
I
I
On state input current
On-state resistance
V
V
On-state resistance
V
V
Nominal load current
V
Current limit (active if V
V
D
D
j
j
j
IN
IN
IN
IN
DS
IN
= - 40 ...+ 150, I
= -40...+85 °C, V
= 150 °C
= 0.3 mA, T
= 0.3 mA, T
j
= 5 V, I
= 5 V, I
= 10 V, I
= 10 V, I
= 10 V, V
= 0.5 V, T
= 25°C, unless otherwise specified
D
D
D
D
= 1.4 A, T
= 1.4 A, T
DS
j
j
= 1.4 A, T
= 1.4 A, T
j
= 25 °C
= 150 °C
< 150°C, V
= 12 V, t
D
bb
= 10 mA
5)
= 32 V, V
j
j
DS
= 25 °C
= 150 °C
j
j
m
= 25 °C
= 150 °C
>2.5 V)
IN
= 200 µs
= 10 V, T
IN
1)
= 0 V
thJA and R ds(on)
A
= 85 °C
3
Symbol
V
I
V
I
R
R
I
I
DSS
IN(on)
D(Nom)
D(lim)
DS(AZ)
IN(th)
DS(on)
DS(on)
Smart Low Side Power Switch
min.
1.3
0.8
1.4
42
D(lim) ). If the device is in on condit
5
-
-
-
-
-
-
-
Values
190
350
150
280
typ.
1.5
1.7
1.8
7.5
10
4
-
-
Rev. 1.3, 2008-04-14
HITFET BSP 76
max.
240
480
200
400
2.2
55
10
30
10
8
-
-
Unit
V
µA
V
µA
mW
A