BTS5016SDA Infineon Technologies, BTS5016SDA Datasheet
BTS5016SDA
Specifications of BTS5016SDA
BTS5016SDAXT
SP000298622
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BTS5016SDA Summary of contents
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... Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Block Diagram and Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.2 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3.1 Pin Assignment BTS5016SDA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3.2 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4.1 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4.2 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5 Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5.1 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 ...
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... The power transistor is built by a N-channel vertical power MOSFET with charge pump. The design is based on Smart SIPMOS chip on chip technology. The BTS5016SDA has a current controlled input and offers a diagnostic feedback with load current sense and a defined fault signal in case of overload operation, overtemperature shutdown and/or short circuit shutdown. ...
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... V grounded loads • All types of resistive, inductive and capacitive loads • Most suitable for loads with high inrush currents lamps • Replaces electromechanical relays, fuses and discrete circuits Datasheet Smart High-Side Power Switch 4 BTS5016SDA Overview Rev. 1.1, 2008-11-04 ...
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... V I bIS VBB IN BTS5016SDA OUT Smart High-Side Power Switch BTS5016SDA Block Diagram and Terms base chip clamp for inductive load current limitation OUT Rev. 1.1, 2008-11- OUT I L Overview .emf Terms.emf ...
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... Pin Configuration 3.1 Pin Assignment BTS5016SDA Figure 3 Pin Configuration 3.2 Pin Definitions and Functions Pin Symbol Function 1 OUT Output; output to the load; pin 1 and 5 must be externally shorted Input; activates the power switch if shorted to ground Supply Voltage; positive power supply voltage; tab and pin 3 are internally shorted. ...
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... Symbol Min bb(SC) V bb(LD) V bIN bIS /dt bIN stg V ESD is the internal resistance of the Load Dump pulse generator Smart High-Side Power Switch BTS5016SDA General Product Characteristics Limit Values Unit Conditions Max. - – – R – Ω 1.5 Ω – -140 15 mA – - – ...
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... Where applicable a thermal via array under the exposed pad contacted the first inner copper layer. Datasheet Smart High-Side Power Switch Symbol Limit Values Min. Typ. Max. R – – 1.3 thjc R thja - copper heatsinking area (one layer, 70 µm 8 BTS5016SDA General Product Characteristics Unit Conditions K/W – K/W – Rev. 1.1, 2008-11-04 ...
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... The power stage is built by a N-channel vertical power MOSFET (DMOS) with charge pump. 5.1 Input Circuit Figure 4 shows the input circuit of the BTS5016SDA. The current source to V off in case of open input pin. The zener diode protects the input circuit against ESD pulses. V bIN ...
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... The voltage drop in reverse polarity mode is described in Section 6. Figure 6 Typical On-State Resistance 25°C j Figure 7 Typical Output Voltage Drop Limitation Datasheet depends on the supply voltage as well as the junction temperature ≥ Smart High-Side Power Switch BTS5016SDA Power Stages , Rev. 1.1, 2008-11- Figure ...
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... OUT(CL Figure 9 Switching an Inductance 5.3.1 Maximum Load Inductance While de-energizing inductive loads, energy has to be dissipated in the BTS5016SDA. This energy can be calculated via the following equation the event of de-energizing very low ohmic inductances ( Datasheet V drops below ground potential due to the involved ...
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... See V inductance at =12V ≤ 150°C T j(o) Figure 10 Maximum load inductance for single pulse, T Datasheet Smart High-Side Power Switch Figure 10 for the maximum allowed , ≤ 150°C. j(0) 12 BTS5016SDA Power Stages Rev. 1.1, 2008-11-04 ...
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... V - bIN( bb(ucp bb(OFF IN(on IN(off) R DS(ON ON(NL) I 5.5 L(nom ON(CL ON(inv OFF t - d(inv) 13 Smart High-Side Power Switch BTS5016SDA Power Stages Unit Conditions Typ. Max 2.5 3 ° 5.5 V – 1.4 2.2 mA – I µ 1.4 2.2 mA ≥ bIN - 30 µA – V mΩ =0V, ...
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... OFF R DS(ON) V > 0V), a current through the intrinsic body diode causing a voltage drop of bIN t after the transition from inverse to forward operation. A sense current d(inv) 14 Smart High-Side Power Switch BTS5016SDA Power Stages Unit Conditions Max 2.2 Ω, 0.3 0.6 V/µ 2.2 Ω, ...
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... ON t expired after switch on. d(SC1 not activated or that the on chip temperature sensor ON(SC) t expired, the device switches off resulting from d(SC1) 15 Smart High-Side Power Switch BTS5016SDA Protection Functions Figure 11 shows the dependency for the device will ON(SC) ...
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... IN OUT PROFET 10mΩ SHORT CIRCUIT Figure 13 Short circuit Datasheet ON(SC) t Τ V_ON_detect .emf outlines allowable combinations for a single short circuit event short_circuit . emf 16 Smart High-Side Power Switch BTS5016SDA Protection Functions Overtemperature detection thermal hysteresis Over_Temp.emf 9 Ω Rev. 1.1, 2008-11- ...
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... V < 16V the pin IN or the pin IS should be low ohmic connected to signal bb should not be above 80 mA 0.08A -------- - ------- - ------------------------------- + = Smart High-Side Power Switch BTS5016SDA Protection Functions Figure 14 for details power ground 2 ⋅ Rbb V = 16V an additional resistor bb 12V – Rev. 1.1, 2008-11-04 Reverse.emf R is ...
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... Beside the output clamp for the power stage as described in implemented for all logic pins. See IN Figure 15 Overvoltage Protection 6.5 Loss of Ground Protection In case of complete loss of the device ground connections the BTS5016SDA securely changes to or remains in off state. 6.6 Loss of V Protection bb In case of complete loss of V the BTS5016SDA remains in off state ...
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... I L12(SC L18(SC L24(SC L30(SC 2.5 ON(SC) t 200 d(SC1 150 j(SC) T ∆ ON(rev line - Smart High-Side Power Switch BTS5016SDA Protection Functions Unit Conditions Typ. Max 4V 110 (Tab to pin 1 and 100 (Tab to pin 1 and 170 µ (Tab to pin 1 and (Tab to pin 1 and 5) ...
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... Short circuit current limit for max. duration of 3) min. value valid only if input “off-signal” time exceeds 30 µs Datasheet Smart High-Side Power Switch Symbol Limit Values Min. Typ. Max Z, Z, prior to shutdown, see also Figure d(SC1) 20 BTS5016SDA Protection Functions ° Unit Conditions 12. Rev. 1.1, 2008-11-04 ...
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... Diagnosis For diagnosis purpose, the BTS5016SDA provides an IntelliSense signal at the pin IS. The pin IS provides during normal operation a sense current, which is proportional to the load current as long as V > 5V. The ratio of the output current is defined as bIS the forward voltage drops below The pin IS provides in case of any fault conditions a defined fault current ...
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... Datasheet 1) k ILIS I , the forward voltage drop >1V typ IS(fault IS(LL Smart High-Side Power Switch BTS5016SDA , V and the load current The ripple ON(NL) short over-temperature V >V V <1V typ. ON ON(SC Lx(SC IS(fault) IS(fault) delay(fault) Rev. 1.1, 2008-11-04 Diagnosis I in ON- ...
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... Symbol Limit Values Min. Typ ILIS 8.7 8.0 7.2 4.8 disabled 1) I 4.0 IS(lim) I 4.0 IS(fault) I – IS(LL) I – IS(LH) t – son(IS) t – slc(IS) t 200 delay(fault) 23 Smart High-Side Power Switch BTS5016SDA Unit Conditions Max < IS IS(lim) 10 11 7.5 mA < typ ...
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... Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/packages. Datasheet Smart High-Side Power Switch 24 BTS5016SDA Package Outlines Dimensions in mm Rev. 1.1, 2008-11-04 ...
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... Revision History Version Date Changes Datasheet 2008-11-04 Page Rev. 1.1 Datasheet 2008-01-22 Initial version of datasheet Rev. 1.0 Datasheet 13: Parameter IIN(off) updated from maximum 10µA to maximum 30µA. 25 Smart High-Side Power Switch BTS5016SDA Revision History Rev. 1.1, 2008-11-04 ...
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... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life ...
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... Published by Infineon Technologies AG ...