IC LOW SIDE POWER SWITCH TO220-3

BTS149

Manufacturer Part NumberBTS149
DescriptionIC LOW SIDE POWER SWITCH TO220-3
ManufacturerInfineon Technologies
SeriesHITFET®
TypeLow Side
BTS149 datasheets
 


Specifications of BTS149

Input TypeNon-InvertingNumber Of Outputs1
On-state Resistance14 mOhmCurrent - Output / Channel19A
Current - Peak Output40AOperating Temperature-40°C ~ 150°C
Mounting TypeThrough HolePackage / CaseTO-220-2
Switch TypeLow SidePower Switch FamilyBTS149
Power Switch On Resistance18mOhmOutput Current19A
MountingThrough HolePackage TypeTO-220
Operating Temperature (min)-40COperating Temperature (max)150C
Operating Temperature ClassificationAutomotivePin Count3 +Tab
Power Dissipation178WLead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Supply-  
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Smart Lowside Power Switch
Features
• Logic Level Input
• Input Protection (ESD)
•=Thermal shutdown with latch
• Overload protection
• Short circuit protection
• Overvoltage protection
Current limitation
• Status feedback with external input resistor
• Analog driving possible
Application
• All kinds of resistive, inductive and capacitive loads in switching or
linear applications
• µC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS  chip on chip tech-
nology. Fully protected by embedded protected functions.
dv /d t
1
lim ita tio n
IN
O v erloa d
E S D
pro te ctio n
Product Summary
Drain source voltage
On-state resistance
Current limit
Nominal load current
Clamping energy
D rain
O ve rvoltag e
C u rre n t
p rotection
lim ita tio n
O ve r-
S ho rt c ircu it
S h ort circ uit
te m pe rature
p rotection
p ro te ctio n
p ro te ctio n
S o u rce
H IT F E T
Page 1
HITFET
    = = = =
BTS 149
60
V
DS
18
R
DS(on)
30
I
D(lim)
19
I
D(ISO)
6000 mJ
E
AS
V bb
+
L O A D
M
2
3
19.05.2000
V
mΩ
A
A

BTS149 Summary of contents

  • Page 1

    Smart Lowside Power Switch Features • Logic Level Input • Input Protection (ESD) •=Thermal shutdown with latch • Overload protection • Short circuit protection • Overvoltage protection Current limitation • • Status feedback with external input resistor • Analog driving ...

  • Page 2

    Maximum Ratings °C unless otherwise specified Parameter Drain source voltage Drain source voltage for short circuit protection Continuous input current 1) -0.2V ≤ V ≤ 10V IN V < -0. > 10V IN IN ...

  • Page 3

    Electrical Characteristics Parameter at T =25°C, unless otherwise specified j Characteristics Drain source clamp voltage ...+ 150° Off state drain current -40...+150 °C, V ...

  • Page 4

    Electrical Characteristics Parameter at T =25°C, unless otherwise specified j Characteristics Initial peak short circuit current limit Current limit ...

  • Page 5

    Block Diagramm Terms HITFET Input circuit (ESD protection) IN ESD-ZD I Source ESD zener diodes are not designed for DC current > >10V. IN Inductive and ...

  • Page 6

    Maximum allowable power dissipation P = f(T ) tot c BTS 149 190 W 160 140 120 100 On-state resistance 19A; V =5V ON ...

  • Page 7

    Typ. transfer characteristics =12V; T =25° Transient thermal impedance thJC p parameter ...

  • Page 8

    Application examples: Status signal of thermal shutdown by monitoring input current HITFET µC µ ∆ IN( ∆ V thermal shutdown Page 8 BTS 149 19.05.2000 ...

  • Page 9

    ... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...