VND1NV04TR-E STMicroelectronics, VND1NV04TR-E Datasheet - Page 23

• Manufacturer Part Number: VND1NV04TR-E
• Description: IC PWR MOSFET 40V 1.7A DPAK
• Manufacturer: STMicroelectronics
• Series: OMNIFET II™r
• Type: Low Sider

Specifications of VND1NV04TR-E

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 250 mOhm
• Current - Peak Output: 1.7A
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Switch Type: Low Side
• Power Switch Family: VND1NV04
• Power Switch On Resistance: 250mOhm
• Output Current: 1.7A
• Mounting: Surface Mount
• Supply Current: 100uA
• Package Type: TO-252
• Pin Count: 2 +Tab
• Power Dissipation: 35W
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 500mA
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 250mohm
• Rds(on) Test Voltage Vgs: 5V
• Threshold Voltage Vgs Typ: 2.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Operating Temperature: -
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Compliant

VND1NV04 - VNN1NV04 - VNS1NV04
Package and PCB thermal data
Figure 40. SO-8 thermal impedance junction ambient single pulse
ZTH (°C/ W )
1000
Footprint
100
2
2 cm
10
1
0,1
0,0001
0,001
0,01
0,1
1
10
100
1000
Time (s)
Equation 3: pulse calculation formula
⋅
δ
(
1 δ
)
Z
=
R
+
Z
–
THδ
TH
THtp
where δ = t
/T
P
Figure 41. SO-8 thermal fitting model of a single channel
Doc ID 7381 Rev 2
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