BTS949 Infineon Technologies, BTS949 Datasheet - Page 4

• Manufacturer Part Number: BTS949
• Description: IC LOW SIDE POWER SWITCH TO220-5
• Manufacturer: Infineon Technologies
• Series: HITFET®r
• Type: Low Sider

Specifications of BTS949

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 14 mOhm
• Current - Output / Channel: 19A
• Current - Peak Output: 220A
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-5 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -

Characteristics
Initial peak short circuit current limit
V
Current limit
V
T
V
T
Dynamic Characteristics
Turn-on time
R
Turn-off time
R
Slew rate on
R
Slew rate off
R
Protection Functions
Thermal overload trip temperature
Unclamped single pulse inductive energy
I
I
Inverse Diode
Inverse diode forward voltage
I
Electrical Characteristics
Parameter
at T
1 Device switched on into existing short circuit (see diagram Determination of I D(lim) ). If the device is in on condition
and a short circuit occurs, these values might be exceeded for max. 50 µs.
D
D
F
j
j
IN
IN
IN
L
L
L
L
= -40...+150 °C, without R
= -40...+150 °C, R
= 5*19A, t
= 19 A, T
= 19 A, T
= 1 Ω, V
= 1 Ω, V
= 1 Ω, V
= 1 Ω, V
= 10 V, V
= 10 V, V
= 10 V, V
j
=25°C, unless otherwise specified
IN
IN
IN
IN
j
j
m
1)
= 25 °C, V
= 150 °C, V
DS
DS
DS
= 0 to 10 V, V
= 10 to 0 V, V
= 0 to 10 V, V
= 10 to 0 V, V
= 300 µS, V
= 12 V
= 12 V, t
= 12 V, t
V
V
70 to 50% V
50 to 70% V
IN
IN
CC
to 90% I
to 10% I
bb
= 0 Ω
bb
m
m
= 32 V
IN
= 350 µs,
= 350 µs,
= 32 V
bb
bb
bb
bb
CC
= 0 V
D
D
bb
= 12 V
= 12 V
= 12 V
bb
= 12 V
:
:
:
:
Page 4
I
I
t
t
-dV
dV
T
E
V
Symbol
D(SCp)
D(lim)
on
off
jt
AS
SD
DS
DS
/dt
/dt
off
on
6000
1800
min.
150
150
9.5
-
-
-
-
-
-
Values
175
220
typ.
165
1,1
19
40
70
1
1
-
-
max.
270
100
170
40
3
3
-
-
-
-
-
07.06.2000
BTS 949
A
µs
V/µs
°C
mJ
V
Unit