BTS50085-1TMB Infineon Technologies, BTS50085-1TMB Datasheet - Page 5

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BTS50085-1TMB

Manufacturer Part Number
BTS50085-1TMB
Description
IC SWITCH PWR HISIDE TO220-7
Manufacturer
Infineon Technologies
Series
PROFET®r
Type
High Sider
Datasheet

Specifications of BTS50085-1TMB

Input Type
Non-Inverting
Number Of Outputs
1
On-state Resistance
7.2 mOhm
Current - Output / Channel
44A
Current - Peak Output
90A
Voltage - Supply
5 V ~ 58 V
Operating Temperature
-40°C ~ 150°C
Mounting Type
Through Hole
Package / Case
TO-220-7 (Bent and Staggered Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000385912

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BTS50085-1TMB
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
BTS50085-1TMB
Quantity:
4 800
Parameter and Conditions
at T
Protection Functions
Short circuit current limit
V
see page 8 and 13
Short circuit shutdown delay after input current
positive slope, V
min. value valid only if input "off-signal" time exceeds 30 µs
Output clamp (inductive load switch off)
Short circuit shutdown detection voltage
Thermal overload trip temperature
Thermal hysteresis
Reverse Battery
Reverse battery voltage
On-state resistance
Integrated resistor in V
16
17
18
Infineon Technologies AG
V
I
)
) The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as
ON
at V
(pin 4 to pins 1,2,6,7)
L
) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
bb
= 40 mA
j
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not
designed for continuous repetitive operation.
not subject to production test, specified by design.
it is done with all polarity symmetric loads). Note that under off-conditions (I
is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic
drain-source diode. The temperature protection is not active during reverse current operation! To reduce the
power dissipation at the integrated R
= -40 ... +150 °C, V
= 24 V, time until shutdown max. 300 µs
= -12V, V
OUT
= V
bb
IN
- V
= 0, I
ON
ON(CL)
> V
bb
L
(Pins 1,2,6,7 to pin 4)
= - 20 A, R
= 24 V unless otherwise specified
16)
ON(SC)
bb
(e.g. over voltage)
18
(Tab to pins 1,2,6,7)
line
)
17)
IS
= 1 kΩ T
bb
resistor an input resistor is recommended as described on page 9.
T
c
T
17
T
T
j
T
=+150°C:
T
c
Page 5
= 150 °C:
j
)
j
c
j
=150°C:
=-40°C:
= 25 C:
= 25 °C:
=25°C:
I
I
I
t
V
V
T
-V
R
R
Symbol
L(SC)
L(SC)
L(SC)
d(SC)
jt
T
ON(CL)
ON(SC)
ON(rev)
bb
bb
jt
Data Sheet BTS50085-1TMB
IN
150
105
min
50
80
62
90
= I
--
--
--
--
--
--
IS
= 0) the power transistor
Values
120
125
8.8
typ
90
90
80
65
10
--
--
--
--
6
2008-Jan-24
10.5
max
180
350
135
150
72
42
20
--
--
--
--
--
Unit
mΩ
°C
µs
A
V
V
K
V

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