BTS5231GS Infineon Technologies, BTS5231GS Datasheet
BTS5231GS
Specifications of BTS5231GS
SP000203741
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BTS5231GS Summary of contents
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Smart High-Side Power Switch PROFE T Two Cha nnels, 140 mΩ Automotive Power Da ta She .0, Dec ...
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Table of Contents Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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Smart High-Side Power Switch PROFET Product Summary The BTS 5231GS is a dual channel high-side power switch in P-DSO-14-18 package providing embedded protective functions. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The device ...
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Protective Functions • Reverse battery protection without external components (GND resistor integrated) • Short circuit protection • Overload protection • Multi-step current limitation • Thermal shutdown with restart • Thermal restart at reduced current limitation • Overvoltage protection without external ...
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Overview The BTS 5231GS is a dual channel high-side power switch (two times 140 mΩ) in P-DSO-14-18 package providing embedded protective functions. The Enhanced IntelliSense pins IS1 and IS2 provide a sophisticated diagnostic feedback signal including current sense function ...
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Terms Following figure shows all terms used in this data sheet IN1 I V IN2 IN1 V IN2 I IS1 I V IS2 IS1 V IS2 I SEN V SEN Figure 2 Terms Symbols without channel ...
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Pin Configuration 2.1 Pin Assignment BTS 5231GS Figure 3 Pin Configuration P-DSO-14-18 2.2 Pin Definitions and Functions Pin Symbol 3 IN1 6 IN2 4 IS1 5 IS2 9 SEN 1) 12, 13 OUT1 1) 10, 11 OUT2 2 GND ...
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Electrical Characteristics 3.1 Maximum Ratings Stresses above the ones listed here may cause permanent damage to the device. Exposure to maximum rating conditions for extended periods may affect device reliability °C (unless otherwise specified) j Pos. ...
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°C (unless otherwise specified) j Pos. Parameter Temperatures 3.1.13 Junction Temperature 3.1.14 Dynamic temperature increase while switching 3.1.15 Storage Temperature ESD Susceptibility 3.1.16 ESD susceptibility HBM and describe the complete circuit impedance including line, ...
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Block Description and Electrical Characteristics 4.1 Power Stages The power stages are built by a N-channel vertical power MOSFET (DMOS) with charge pump. 4.1.1 Output On-State Resistance The on-state resistance depends on the supply voltage as well as the ...
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A high signal at the input pin causes the power DMOS to switch on with a dedicated slope, which is optimized in terms of EMC emission OUT 90% 70% 30% 10% Figure 6 Switching a Load ...
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V OUT OUT(CL Figure 8 Switching an Inductance Maximum Load Inductance While demagnization of inductive loads, energy has to be dissipated in the BTS 5231GS. This energy can be calculated with following equation ...
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Electrical Characteristics -40 °C to +150 °C (unless otherwise specified typical values Pos. Parameter General 4.1.1 Operating voltage 4.1.2 Operating current one channel ...
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-40 °C to +150 °C (unless otherwise specified typical values Pos. Parameter Thermal Resistance 4.1.10 Junction to case 4.1.11 Junction to ambient one channel ...
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Protection Functions The device is fully protected by embedded protection functions. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions ...
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Reverse Polarity Protection In case of reverse polarity, the intrinsic body diode causes power dissipation. Additional power is dissipated by the integrated ground resistor. Use following formula for estimation of total power dissipation ∑ diss(rev) ...
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Electrical Characteristics -40 °C to +150 °C (unless otherwise specified typical values Pos. Parameter Over Load Protection 4.2.1 Load current limitation 4.2.2 Repetitive ...
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Diagnosis For diagnosis purpose, the BTS 5231GS provides an Enhanced IntelliSense signal at pins IS1 and IS2. This means in detail, the current sense signal to the load current (ratio Table 1) occurs. In case of a failure mode, ...
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Table 1 Truth Table (cont’d) Operation Mode Normal Operation (ON) Current Limitation Short Circuit to GND Over-Temperature V Short Circuit to bb Open Load Low Level High Level high impedance, potential depends on ...
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Details about timings between the diagnosis signal I load current in ON-state can be found OFF OUT sIS(ON Figure 15 Timing of Diagnosis Signal in ON-state In case ...
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IN OFF sIS(OVL) Figure 16 Timing of Diagnosis Signal in Over Load Condition 4.3.2 OFF-State Diagnosis Details about timings between the diagnosis signal I load current in OFF-state can be ...
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Sense Enable Function The diagnosis signals have to be switched high signal at sense enable pin (SEN). See Figure 18 for details on the timing between SEN pin and diagnosis signal note that the diagnosis is ...
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Electrical Characteristics -40 °C to +150 ° typical values Pos. Parameter General Definition 4.3.1 Diagnostics signal in failure mode 4.3.2 Diagnostics signal current ...
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-40 °C to +150 ° typical values Pos. Parameter 4.3.8 Current sense leakage/offset current 4.3.9 Current sense leakage, while diagnosis disabled 4.3.10 Current sense ...
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Package Outlines BTS 5231GS Figure 19 P-DSO-14-18 (Plastic Dual Small Outline Package) You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. Data Sheet Smart High-Side Power Switch Package Outlines ...
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Revision History Version Date Changes V1.0 05-12-19 initial version • • • • Data Sheet Smart High-Side Power Switch 26 BTS 5231GS Revision History 2005-12-19 ...
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... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...
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... Published by Infineon Technologies AG ...