MCZ33810EK Freescale Semiconductor, MCZ33810EK Datasheet - Page 8

• Manufacturer Part Number: MCZ33810EK
• Description: IC IGNITION INJECTOR 32-SOIC
• Manufacturer: Freescale Semiconductor

Specifications of MCZ33810EK

• Applications: Automotive
• Current - Supply: 10mA
• Voltage - Supply: 4.5 V ~ 36 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 32-SOIC (7.5mm Width) Exposed Pad, 32-eSOIC, 32-HSOIC
• Product: Fan / Motor Controllers / Drivers
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 3. Static Electrical Characteristics
timers, unless otherwise noted. Where typical values reflect the parameter’s approx. average value with VPWR = 13 V, TA =
25°C.
8
33810
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
INJECTOR DRIVER OUTPUTS (OUT 0:3) (Continued)
IGNITION (IGBT) GATE DRIVER PARAMETERS (GD 0:3 FB0:3)
SOFT SHUTDOWN FUNCTION (VOLTAGES REFERENCED TO IGBT COLLECTOR)
CURRENT SENSE COMPARATOR (RSP, RSN)
Output Clamp Voltage 1
Output Leakage Current
Over-temperature Shutdown
Over-temperature Shutdown Hysteresis
Gate Driver Output Voltage
Sleep Mode Gate to Source Resistor
Sleep Mode FBx pin Leakage Current
Feedback Sense Current (FBx Input Current)
FBx = 32 V, Outputs Programmed OFF
Gate Drive Source Current (1 ≤ V
Gate Drive Turn Off Resistance
Low Voltage Flyback Clamp
Spark Duration Comparator Threshold
Spark Duration Comparator Threshold
Open Secondary Comparator Threshold (referenced from primary to
NOMI Trip Threshold Accuracy - Steady State Condition
Characteristics noted under conditions of 3.0 V ≤ VDD ≤ 5.5 V, 6.0 V ≤ VPWR ≤ 32 V, -40°C ≤ TC ≤ 125°C, and calibrated
I
VDD = 5.0 V, V
VDD = 5.0 V, V
VDD = 0 V, V
I
I
VDD = 0 V, V
Driver Command Off, Soft Shutdown Enabled, GDx = 2.0 V
Rising Edge Relative to VPWR
Falling Edge Relative to VPWR, Default = 5.5 V Assuming ideal external
10:1 voltage divider. Voltage measured at high end of divider, not at pin.
Tolerance of divider not included
Rising Edge Relative to GND. No hysteresis with 10:1 voltage divider.
3.0 A across 0.02 Ω (RSP - RSN = 60 mV)
10.75 A across 0.04 Ω (RSP - RSN = 430 mV)
D
GD
GD
= 20 mA
= 500 μA
= -500 μA
DRAIN
FBx
DRAIN
DRAIN
= 24 V,
= 24 V, Sleep State
= V
= 24 V, Open Load Detection Current Disabled
OC
(10)
Characteristic
- 1.0 V, Open Load Detection Current Disabled
GD
≤ 3)
(referenced to IC Ground Tab)
(referenced to IC Ground Tab)
(10)
(11)
R
I
GS (PULLDOWN
I
FBX(FLT-SNS)
NOMI
GATEDRIVE
I
T
V
I
OUT (LKG)
V
V
V
V
FBX (LKG)
R
Symbol
LIM (HYS)
GS (OFF)
TH-FALL
V
GS (ON)
TH-RISE
TH-RISE
DS(ON)
V
T
OC1
LVC
LIM
)
TRIPTA
VPWR
Analog Integrated Circuit Device Data
+9.0
11.5
Min
155
100
650
500
-10
5.0
4.8
1.2
4.9
7.4
9.9
48
18
–
–
–
0
–
VPWR
0.375
11.00
2.75
Typ
+11
200
780
7.0
5.5
8.2
Freescale Semiconductor
53
10
21
–
–
–
–
–
–
–
–
VPWR + 13
3000
1000
Max
12.1
15.5
185
300
950
9.0
0.5
1.0
1.0
3.6
6.1
9.1
58
20
10
15
24
10
Unit
KΩ
μA
μA
μA
μA
°
°
Ω
%
V
V
V
V
V
V
C
C