MT16VDDT12864AY-40BDB Micron Technology Inc, MT16VDDT12864AY-40BDB Datasheet - Page 8

• Manufacturer Part Number: MT16VDDT12864AY-40BDB
• Description: MODULE SDRAM DDR 1GB 184DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16VDDT12864AY-40BDB

• Memory Type: DDR SDRAM
• Memory Size: 1GB
• Speed: 400MT/s
• Package / Case: 184-DIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Specifications
Table 8:
PDF: 09005aef80739fa5/Source:09005aef807397e5
DD16C64_128_256x64A.fm - Rev. E 8/08 EN
V
V
Symbol
DD
IN
, V
I
T
/V
OZ
I
A
I
DD
OUT
Q V
Parameter
Voltage on any pin relative to V
Input leakage current; Any input 0V ≤ V
V
test = 0V)
Output leakage current; 0V ≤ V
disabled
DRAM ambient operating temperature
Absolute Maximum Ratings
DD
REF
/V
input 0V ≤ V
Notes:
DD
Q supply voltage relative to V
Stresses greater than those listed in Table 8 may cause permanent damage to the
module. This is a stress rating only, and functional operation of the module at these or
any other conditions outside those indicated in each device’s data sheet is not implied.
Exposure to absolute maximum rating conditions for extended periods may adversely
affect reliability.
1. For further information, refer to technical note
IN
on Micron’s Web site.
≤ 1.35V (All other pins not under
OUT
512MB, 1GB, 2GB (x64, DR) 184-Pin DDR SDRAM UDIMM
SS
≤ V
SS
DD
1
IN
Q; DQ are
≤ V
DD
8
;
Address inputs,
RAS#, CAS#, WE#, BA
S#, CKE
CK0, CK0#
CK1, CK1#, CK2, CK2#
DM
DQ, DQS
Commercial
Industrial
Micron Technology, Inc., reserves the right to change products or specifications without notice.
TN-00-08: “Thermal Applications,”
Electrical Specifications
Min
–1.0
–0.5
–32
–12
–10
–40
16
–8
–4
©2004 Micron Technology, Inc. All rights reserved
0
Max
+3.6
+3.2
+32
+12
+10
+70
+85
16
+8
+4
available
Units
µA
µA
°C
°C
V
V