MT18VDDF12872DG-335D3 Micron Technology Inc, MT18VDDF12872DG-335D3 Datasheet

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MT18VDDF12872DG-335D3

Manufacturer Part Number
MT18VDDF12872DG-335D3
Description
MODULE SDRAM DDR 1GB 184DIMM
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT18VDDF12872DG-335D3

Memory Type
DDR SDRAM
Memory Size
1GB
Speed
333MT/s
Package / Case
184-DIMM
Main Category
DRAM Module
Sub-category
DDR SDRAM
Module Type
184RDIMM
Device Core Size
72b
Organization
128Mx72
Total Density
1GByte
Chip Density
512Mb
Access Time (max)
700ps
Maximum Clock Rate
333MHz
Operating Supply Voltage (typ)
2.5V
Operating Current
1.62A
Number Of Elements
18
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
184
Mounting
Socket
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DDR SDRAM RDIMM
MT18VDDF6472D – 512MB
MT18VDDF12872D – 1GB
For component data sheets, refer to Micron’s Web site:
Features
• 184-pin, registered dual in-line memory module
• Fast data transfer rates: PC2100, PC2700, or PC3200
• 512MB (64 Meg x 72) and 1GB (128 Meg x 72)
• Supports ECC error detection and correction
• V
• V
• 2.5V I/O (SSTL_2-compatible)
• Internal, pipelined double data rate (DDR)
• Bidirectional data strobe (DQS) transmitted/
• Differential clock inputs (CK and CK#)
• Multiple internal device banks for concurrent
• Dual rank
• Selectable burst lengths (BL): 2, 4, or 8
• Auto precharge option
• Auto refresh and self refresh modes: 7.8125µs
• Serial presence-detect (SPD) with EEPROM
• Selectable CAS latency (CL) for maximum
• Gold edge contacts
184-Pin RDIMM (MO-206) Figures
Figure 1:
PDF: 09005aef807eb17d/Source: 09005aef807d24c9
ddf18c64_128x72d.fm - Rev. D 10/08 EN
PCB height: 28.58mm (1.125in)
(RDIMM)
(-40B: V
2n-prefetch architecture
received with data—that is, source-synchronous
data capture
operation
maximum average periodic refresh interval
compatibility
DD
DDSPD
= V
DD
DD
= +2.3V to +3.6V
Q = +2.5V
= V
R/C H (-40B)
Products and specifications discussed herein are subject to change by Micron without notice.
DD
Q = +2.6V)
1
512MB, 1GB (x72, ECC, DR) 184-Pin DDR SDRAM RDIMM
www.micron.com
1
Figure 2:
Notes: 1. Not recommended for new designs.
PCB height: 28.58mm (1.125in)
Options
• Operating temperature
• Package
• Memory clock, speed, CAS latency
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 184-pin DIMM (standard)
– 184-pin DIMM (Pb-free)
– 5.0ns (200 MHz), 400 MT/s, CL = 3
– 6.0ns (167 MHz), 333 MT/s, CL = 2.5
– 7.5ns (133 MHz), 266 MT/s, CL = 2
– 7.5ns (133 MHz), 266 MT/s, CL = 2
– 7.5ns (133 MHz), 266 MT/s, CL = 2.5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2. Contact Micron for industrial temperature
3. CL = CAS (READ) latency; registered mode
module offerings.
will add one clock cycle to CL.
R/C B (-335, -262, -26A, -265)
A
A
2
≤ +85°C)
≤ +70°C)
©2004 Micron Technology, Inc. All rights reserved.
3
1
1
1
Marking
Features
None
-40B
-26A
-335
-262
-265
G
Y
I

Related parts for MT18VDDF12872DG-335D3

MT18VDDF12872DG-335D3 Summary of contents

Page 1

DDR SDRAM RDIMM MT18VDDF6472D – 512MB MT18VDDF12872D – 1GB For component data sheets, refer to Micron’s Web site: Features • 184-pin, registered dual in-line memory module (RDIMM) • Fast data transfer rates: PC2100, PC2700, or PC3200 • 512MB (64 Meg ...

Page 2

... RCD and RP for -335 modules show 18ns to align with industry specifications; 512MB 8K 8K (A0–A12) 4 (BA0, BA1) 256Mb (32 Meg (A0–A9) 2 (S0#, S1#) 1 256Mb DDR SDRAM Module Configuration Bandwidth 64 Meg ...

Page 3

... MT18VDDF12872DY-40B__ MT18VDDF12872DG-335__ MT18VDDF12872DY-335__ MT18VDDF12872DY-262__ MT18VDDF12872DG-26A__ MT18VDDF12872DG-265__ Notes: 1. Data sheets for the base devices can be found on Micron’s Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT18VDDF12872DY-335F1. ...

Page 4

Table 6: Pin Descriptions Symbol A0–A12 BA0, BA1 CK0, CK0# CKE0, CKE1 DM0–DM8 RAS#, CAS#, WE# RESET# S0#, S1# SA0–SA2 SCL CB0–CB7 DQ0–DQ63 DQS0–DQS8 SDA DDSPD V REF PDF: 09005aef807eb17d/Source: 09005aef807d24c9 ...

Page 5

Functional Block Diagrams Figure 3: Functional Block Diagram R/C H (-40B) RS1# RS0# DQS0 DM0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS1 DM1 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQS2 DM2 DQ16 DQ17 DQ18 DQ19 DQ20 ...

Page 6

Figure 4: Functional Block Diagram R/C B (-335, -262, -26A, -265) RS1# RS0# DQS0 DM0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS1 DM1 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQS2 DM2 DQ16 DQ17 DQ18 DQ19 DQ20 ...

Page 7

... JEDEC clock reference board. Registered mode will add one clock cycle to CL. Serial Presence-Detect Operation DDR SDRAM modules incorporate serial presence-detect. The SPD data is stored in a 256-byte EEPROM. The first 128 bytes are programmed by Micron to identify the module type and various DDR SDRAM organizations and timing parameters. The remaining 128 bytes of storage are available for use by the customer ...

Page 8

Electrical Specifications Stresses greater than those listed in Table 7 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated on the ...

Page 9

... Design Considerations Simulations Micron memory modules are designed to optimize signal integrity through carefully designed terminations, controlled board impedances, routing topologies, trace length matching, and decoupling. However, good signal integrity starts at the system level. Micron encourages designers to simulate the signal characteristics of the system’s memory bus to ensure adequate signal integrity of the entire memory system ...

Page 10

I Specifications DD Table 9: I Specifications and Conditions – 512MB (Die Revision K) DD Values are for the MT46V32M8 DDR SDRAM only and are computed from values specified in the 256Mb (32 Meg x 8) component data sheet Parameter/Condition ...

Page 11

Table 10: I Specifications and Conditions – 512MB (All Other Die Revisions) DD Values are for the MT46V32M8 DDR SDRAM only and are computed from values specified in the 256Mb (32 Meg x 8) component data sheet Parameter/Condition Operating one ...

Page 12

Table 11: I Specifications and Conditions – 1GB DD Values are for the MT46V64M8 DDR SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8) component data sheet Parameter/Condition Operating one bank active-precharge current: t ...

Page 13

Register and PLL Specifications Table 12: Register Specifications SSTV16859 devices or equivalent JESD82-4B Parameter Symbol DC high-level input voltage command, address DC low-level input voltage command, address AC high-level V ...

Page 14

Table 13: PLL Specifications CVF857 device or equivalent JESD82-1A Parameter DC high-level input voltage DC low-level input voltage Input voltage (limits) Input differential-pair cross voltage Input differential voltage Input differential voltage Input current Dynamic supply current Dynamic supply current Dynamic ...

Page 15

Serial Presence-Detect Table 15: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input leakage current GND ...

Page 16

Module Dimensions Figure 5: 184-Pin DDR RDIMM (-40B) 2.0 (0.079) R (4X 2.5 (0.098) D (2X) 2.31 (0.091) TYP Pin 1 2.21 (0.087) TYP 1.27 (0.05) 1.0 (0.039) TYP U15 U16 Pin 184 Notes: 1. All dimensions are ...

Page 17

Figure 6: 184-Pin DDR RDIMM (-335, -262, -26A, -265) 2.0 (0.079) R (4X 2.5 (0.098) D (2X) 2.31 (0.091) TYP Pin 1 2.21 (0.087) TYP 1.27 (0.05) 1.0 (0.039) TYP U12 U13 Pin 184 Notes: 1. All dimensions ...

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