MT4VDDT1664HG-26AC3 Micron Technology Inc, MT4VDDT1664HG-26AC3 Datasheet - Page 21

• Manufacturer Part Number: MT4VDDT1664HG-26AC3
• Description: MODULE SDRAM DDR 128MB 200SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT4VDDT1664HG-26AC3

• Memory Type: DDR SDRAM
• Memory Size: 128MB
• Speed: 266MT/s
• Package / Case: 200-SODIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

pdf: 09005aef8086ea3d, source: 09005aef8086ea0b
DD4C8_16_32x64HG.fm - Rev. C 9/04 EN
30.
31. READs and WRITEs with auto precharge are not
32. Any positive glitch in the nominal voltage must be
33. Normal Output Drive Curves:
160
140
120
100
80
60
40
20
Figure 9: Pull-Down Characteristics
0
0.0
t
minimum actually applied to the device CK and
CK/ inputs, collectively during device bank active.
allowed to be issued until
fied prior to the internal precharge command
being issued.
less than 1/3 of the clock and not more than
+400mV or 2.9V maximum, whichever is less. Any
negative glitch must be less than 1/3 of the clock
cycle and not exceed either -300mV or 2.2V mini-
mum, whichever is more positive.
d. The variation in driver pull-up current within
a. The full variation in driver pull-down current
b. The variation in driver pull-down current
c. The full variation in driver pull-up current
HP min is the lesser of
from minimum to maximum process, temper-
ature and voltage will lie within the outer
bounding lines of the V-I curve of Figure 9,
Pull-Down Characteristics.
within nominal limits of voltage and tempera-
ture is expected, but not guaranteed, to lie
within the inner bounding lines of the V-I
curve of Figure 9, Pull-Down Characteristics.
from minimum to maximum process, temper-
ature and voltage will lie within the outer
bounding lines of the V-I curve of Figure 10,
Pull-Up Characteristics.
nominal limits of voltage and temperature is
expected, but not guaranteed, to lie within the
inner bounding lines of the V-I curve of Figure
10, Pull-Up Characteristics.
0.5
1.0
V
V
OUT
OUT
(V)
(V)
t
t
CL minimum and
RAS(MIN) can be satis-
1.5
2.0
Minimum
t
CH
2.5
21
34. Reduced Output Drive Curves:
64MB, 128MB, 256MB (x64, SR)
-100
-120
-140
-160
-180
-200
-20
-40
-60
-80
0
200-PIN DDR SDRAM SODIMM
Figure 10: Pull-Up Characteristics
b. The variation in driver pull-down current
d. The variation in driver pull-up current within
0.0
a. The full variation in driver pull-down current
e. The full variation in the ratio of the maximum
c. The full variation in driver pull-up current
f. The full variation in the ratio of the nominal
Micron Technology, Inc., reserves the right to change products or specifications without notice.
to minimum pull-up and pull-down current
should be between 0.71 and 1.4, for device
drain-to-source voltages from 0.1V to 1.0V, and
at the same voltage and temperature.
pull-up to pull-down current should be unity
±10 percent, for device drain-to-source volt-
ages from 0.1V to 1.0V.
from minimum to maximum process, temper-
ature and voltage will lie within the outer
bounding lines of the V-I curve of Figure 11,
Reduced Output Pull-Down Characteristics,
on page 22.
within nominal limits of voltage and tempera-
ture is expected, but not guaranteed, to lie
within the inner bounding lines of the V-I
curve of Figure 11, Reduced Output Pull-Down
Characteristics, on page 22.
from minimum to maximum process, temper-
ature and voltage will lie within the outer
bounding lines of the V-I curve of Figure 12,
Reduced Output Pull-Up Characteristics, on
page 22.
nominal limits of voltage and temperature is
expected, but not guaranteed, to lie within the
inner bounding lines of the V-I curve of
Figure 12, Reduced Output Pull-Up Character-
istics, on page 22.
0.5
1.0
V
DD
Q - V
©2004 Micron Technology, Inc. All rights reserved.
OUT
(V)
1.5
2.0
2.5