MT8VDDT6464AG-335F4 Micron Technology Inc, MT8VDDT6464AG-335F4 Datasheet

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MT8VDDT6464AG-335F4

Manufacturer Part Number
MT8VDDT6464AG-335F4
Description
MODULE DDR SDRAM 512MB 184-DIMM
Manufacturer
Micron Technology Inc

Specifications of MT8VDDT6464AG-335F4

Memory Type
DDR SDRAM
Memory Size
512MB
Speed
333MT/s
Package / Case
184-DIMM
Main Category
DRAM Module
Sub-category
DDR SDRAM
Module Type
184UDIMM
Device Core Size
64b
Organization
64Mx64
Total Density
512MByte
Chip Density
512Mb
Maximum Clock Rate
333MHz
Operating Supply Voltage (typ)
2.5V
Operating Current
1.4A
Number Of Elements
8
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
184
Mounting
Socket
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Features
• 184-pin, unbuffered dual in-line memory module
• Fast data transfer rates: PC2100, PC2700, or PC3200
• 256MB (32 Meg x 64), and 512MB (64 Meg x 64)
• V
• V
• 2.5V I/O (SSTL_2-compatible)
• Internal pipelined double data rate (DDR)
• Bidirectional data strobe (DQS) transmitted/
• Differential clock inputs (CK and CK#)
• Multiple internal device banks for concurrent
• Single rank
• Selectable burst lengths (BL): 2, 4, or 8
• Auto precharge option
• Auto refresh and self refresh modes: 7.8125µs
• Serial presence-detect (SPD) with EEPROM
• Selectable CAS latency (CL) for maximum
• Gold edge contacts
184-Pin UDIMM (MO-206) Figures
Figure 1:
PCB height: 31.75mm (1.25in)
DDR SDRAM UDIMM
MT8VDDT3264A – 256MB
MT8VDDT6464A – 512MB
For component data sheets, refer to Micron’s Web site:
PDF: 09005aef80867ab3/Source: 09005aef80867a99
DD8C32_64x64A.fm - Rev. J 8/08 EN
(UDIMM)
2n-prefetch architecture
received with data—that is, source-synchronous
data capture
operation
maximum average periodic refresh interval
compatibility
DD
DDSPD
= V
DD
= +2.3V to +3.6V
Q = +2.5V (-40B: V
Standard Layout
Products and specifications discussed herein are subject to change by Micron without notice.
DD
= V
DD
Q)
256MB, 512MB (x64, SR) 184-Pin DDR SDRAM UDIMM
www.micron.com
1
Figure 2:
Figure 3:
Notes: 1. Contact Micron for industrial temperature
PCB height: 31.75mm (1.25in)
PCB height: 28.58mm (1.125in)
Options
• Operating temperature
• Package
• Memory clock, speed, CAS latency
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 184-pin DIMM (standard)
– 184-pin DIMM (Pb-free)
– 5.0ns (200 MHz), 400 MT/s, CL = 3
– 6.0ns (167 MHz), 333 MT/s, CL = 2.5
– 7.5ns (133 MHz), 266 MT/s, CL = 2
– 7.5ns (133 MHz), 266 MT/s, CL = 2
– 7.5ns (133 MHz), 266 MT/s, CL = 2.5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2. Not recommended for new designs.
module offerings.
Alternative Layout
Reduced-Height Layout
A
A
1
≤ +85°C)
≤ +70°C)
©2003 Micron Technology, Inc. All rights reserved.
2
2
2
Marking
Features
None
-40B
-26A
-335
-262
-265
G
Y
I

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MT8VDDT6464AG-335F4 Summary of contents

Page 1

DDR SDRAM UDIMM MT8VDDT3264A – 256MB MT8VDDT6464A – 512MB For component data sheets, refer to Micron’s Web site: Features • 184-pin, unbuffered dual in-line memory module (UDIMM) • Fast data transfer rates: PC2100, PC2700, or PC3200 • 256MB (32 Meg ...

Page 2

... MT8VDDT6464AG-262__ 512MB 512MB MT8VDDT6464AG-26A__ 512MB MT8VDDT6464AG-265__ MT8VDDT6464AY-265__ 512MB Notes: 1. Data sheets for the base devices can be found on Micron’s Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT8VDDT3264AY-335G6. ...

Page 3

Pin Assignments and Descriptions Table 5: Pin Assignments 184-Pin DDR UDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol DQ17 47 REF 2 DQ0 25 DQS2 DQ1 ...

Page 4

... Power supply: +2.5V ±0.2V (-40B: +2.6V ±0.1V) Serial EEPROM positive power supply: +2.3V to +3.6V. SSTL_2 reference voltage (V Ground. – Do not use: These pins are not connected on these modules, but are assigned on other modules in this product family. – No connect: These pins are not connected on the module. 4 Pin Assignments and Descriptions /2) ...

Page 5

Functional Block Diagrams Figure 4: Functional Block Diagram – Standard Layout S0# DQS0 DM0 DQS1 DM1 DQS2 DM2 DQS3 DM3 BA0, BA1 A0–A11/A12 RAS# CAS# WE# CKE0 SCL WP V PDF: 09005aef80867ab3/Source: 09005aef80867a99 DD8C32_64x64A.fm - Rev. J 8/08 EN 256MB, ...

Page 6

Figure 5: Functional Block Diagram – Alternative and Reduced-Height Layout S0# DQS0 DM0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS1 DM1 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQS2 DM2 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 ...

Page 7

... The double data rate architecture is essentially a 2n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for DDR SDRAM modules effectively consists of a single 2n-bit- wide, one-clock-cycle data transfer at the internal DRAM core and two corresponding n- bit-wide, one-half-clock-cycle data transfers at the I/O pins ...

Page 8

Electrical Specifications Stresses greater than those listed in Table 7 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated in each ...

Page 9

... Design Considerations Simulations Micron memory modules are designed to optimize signal integrity through carefully designed terminations, controlled board impedances, routing topologies, trace length matching, and decoupling. However, good signal integrity starts at the system level. Micron encourages designers to simulate the signal characteristics of the system’s memory bus to ensure adequate signal integrity of the entire memory system ...

Page 10

I Specifications DD Table 9: I Specifications and Conditions – 256MB (Die Revision ‘K’) DD Values are shown for the 256Mb (32 Meg x 8) component data sheet Parameter/Condition Operating one bank active-precharge current: (MIN); DQ, DM, and DQS inputs ...

Page 11

Table 10: I Specifications and Conditions – 256MB (All Other Die Revisions) DD Values are shown for the MT46V32M8 DDR SDRAM only and are computed from values specified in the 256Mb (32 Meg x 8) component data sheet Parameter/Condition Operating ...

Page 12

Table 11: I Specifications and Conditions – 512MB DD Values are shown for the MT46V64M8 DDR SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8) component data sheet Parameter/Condition Operating one bank active-precharge current: ...

Page 13

Serial Presence-Detect Table 12: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input leakage current GND ...

Page 14

Module Dimensions Figure 6: 184-Pin UDIMM – Standard Layout 2.0 (0.079) R (4X 2.5 (0.098) D (2X) 2.3 (0.091) TYP Pin 1 2.21 (0.087) TYP 1.27 (0.05) 1.0 (0.039) TYP 2.92 (0.115) TYP Pin 184 49.53 (1.95) TYP ...

Page 15

Figure 7: 184-Pin UDIMM – Alternative and Reduced-Height Layout 2.0 (0.079) R (4X 2.5 (0.098) D (2X) 2.31 (0.091) TYP Pin 1 2.21 (0.87) TYP 1.27 (0.05) 1.0 (0.039) TYP 2.92 (0.115) TYP Pin 184 49.53 (1.95) TYP ...

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