MT16HTS25664HY-667A1 Micron Technology Inc, MT16HTS25664HY-667A1 Datasheet

MODULE DDR2 2GB 200SODIMM

MT16HTS25664HY-667A1

Manufacturer Part Number
MT16HTS25664HY-667A1
Description
MODULE DDR2 2GB 200SODIMM
Manufacturer
Micron Technology Inc

Specifications of MT16HTS25664HY-667A1

Memory Type
DDR2 SDRAM
Memory Size
2GB
Speed
667MT/s
Package / Case
200-SODIMM
Main Category
DRAM Module
Sub-category
DDR2 SDRAM
Module Type
200SODIMM
Device Core Size
64b
Organization
256Mx64
Total Density
2GByte
Chip Density
1Gb
Maximum Clock Rate
667MHz
Operating Supply Voltage (typ)
1.8V
Operating Current
1.176A
Number Of Elements
16
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
200
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
DDR2 SDRAM SODIMM
MT16HTS25664H – 2GB
For component specifications, refer to Micron’s Web site:
Features
• 200-pin, small outline, dual in-line memory module
• Fast data transfer rates: PC2-3200, PC2-4200, or PC2-
• 2GB (256 Meg x 64)
• V
• V
• JEDEC standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• Four-bit prefetch architecture
• DLL to align DQ and DQS transitions with CK
• Multiple internal device banks for concurrent
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1
• Programmable burst lengths: 4 or 8
• Adjustable data-output drive strength
• 64ms, 8,192-cycle refresh
• On-die termination (ODT)
• Serial presence detect (SPD) with EEPROM
• Gold edge contacts
• Dual rank
PDF: 09005aef821e5bf3/Source: 09005aef82198d54
HTS16C256x64H.fm - Rev. A 4/06 EN
(SODIMM)
5300
operation
DD
DDSPD
= V
DD
= +1.7V to +3.6V
Q = +1.8V
Products and specifications discussed herein are subject to change by Micron without notice.
t
CK
www.micron.com/products/ddr2sdram
2GB: (x64, DR) 200-Pin DDR2 SDRAM SODIMM
1
Figure 1:
Notes: 1. CL = CAS (READ) Latency.
Options
• Package
• Frequency/CAS latency
• PCB height
– 200-pin SODIMM (lead-free)
– 3ns @ CL = 5 (DDR2-667)
– 3.75ns @ CL = 4 (DDR2-533)
– 5.0ns @ CL = 3 (DDR2-400)
– 1.18in (29.97mm)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2. Contact Micron for product availability.
200-pin SODIMM (MO-224 R/C “B”)
1
©2006 Micron Technology, Inc. All rights reserved.
2
Marking
Features
-53E
-40E
-667
Y

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MT16HTS25664HY-667A1 Summary of contents

Page 1

DDR2 SDRAM SODIMM MT16HTS25664H – 2GB For component specifications, refer to Micron’s Web site: Features • 200-pin, small outline, dual in-line memory module (SODIMM) • Fast data transfer rates: PC2-3200, PC2-4200, or PC2- 5300 • 2GB (256 Meg x 64) ...

Page 2

... Part Number Density MT16HTS25664HY-667__ 2GB MT16HTS25664HY-53E__ 2GB MT16HTS25664HY-40E__ 2GB Notes: 1. All part numbers end with a two-place code (not shown), designating component and PCB revisions. Consult factory for current revision codes. Example: MT16HTF12864HY-40EA1. PDF: 09005aef821e5bf3/Source: 09005aef82198d54 HTS16C256x64H.fm - Rev. A 4/06 EN 2GB: (x64, DR) 200-Pin DDR2 SDRAM SODIMM ...

Page 3

Module Pin Assignments and Descriptions Table 4: Pin Assignment 200-Pin SODIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol DQS2 101 REF 103 SS ...

Page 4

Table 5: Pin Descriptions Pin numbers may not correlate with symbols; refer to Pin Assignment tables on page 3 for more information Pin Numbers 114, 119 ODT0, ODT1 30, 32, 164, 166 CK0, CK0# CK1, CK1# 79, 80 CKE0, CKE1 ...

Page 5

Table 5: Pin Descriptions Pin numbers may not correlate with symbols; refer to Pin Assignment tables on page 3 for more information Pin Numbers 197 198, 200 14, 16, 17, 19, 20, DQ0–DQ63 22, 23, 25, ...

Page 6

... Functional Block Diagram Unless otherwise noted, resistor values are 22Ω. Micron module part numbers are explained in the Module Part Numbering Guide a numbering.html. Modules use the following DDR2 SDRAM devices: MT47H128M8BT (1GB). Component specifications are available at: ddr2sdram. Figure 3: Functional Block Diagram 3Ω ...

Page 7

... READs and by the memory controller during WRITEs. DQS is edge- aligned with data for READs and center-aligned with data for WRITEs. DDR2 SDRAM modules operate from a differential clock (CK and CK#); the crossing of CK going HIGH and CK# going LOW will be referred to as the positive edge of CK. ...

Page 8

... Simulations can then render a considerably more accurate result. JEDEC modules are now designed by using simula- tions to close timing budgets. PDF: 09005aef821e5bf3/Source: 09005aef82198d54 HTS16C256x64H ...

Page 9

Table 7: DDR2 I Specifications and Conditions – 2GB DD Values shown for DDR2 SDRAM components only Parameter/Condition Operating one bank active-precharge current RAS = RAS MIN (I ); CKE is HIGH HIGH between ...

Page 10

AC Timing and Operating Conditions Recommended AC operating conditions are given in the DDR2 component data sheets, available at www.micron.com/products/ddr2sdram. Module speed grades correlate with component speed grades as shown in the following table: Table 8: Module and Component Speed ...

Page 11

Figure 4: Data Validity SCL SDA Figure 5: Definition of Start and Stop SCL SDA Figure 6: Acknowledge Response From Receiver SCL from Master Data Output from Transmitter Data Output from Receiver PDF: 09005aef821e5bf3/Source: 09005aef82198d54 HTS16C256x64H.fm - Rev. A 4/06 ...

Page 12

Table 9: EEPROM Device Select Code The most significant bit (b7) is sent first Select Code Memory area select code (two arrays) Protection register select code Table 10: EEPROM Operating Modes Mode Current address read Random address read Sequential read ...

Page 13

Table 11: Serial Presence-Detect EEPROM DC Operating Conditions All voltages referenced to V Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Inputl low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input leakage current: ...

Page 14

Table 13: Serial Presence-Detect Matrix “1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; table notes located on page 15 Byte Description 0 Number of SPD bytes used by Micron 1 Total number of bytes in SPD device 2 Fundamental memory ...

Page 15

Table 13: Serial Presence-Detect Matrix “1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; table notes located on page 15 Byte Description 33 Address and command hold time, 34 Data/ Data mask input setup time, 35 Data/ Data mask input hold ...

Page 16

Module Dimensions Figure 8: 200-pin DDR2 SODIMM Module Dimensions 0.079 (2.00) R (2X) U1 0.071 (1.80) (2X) 0.236 (6.00) 0.100 (2.55) 0.039 (0.99) 0.079 (2.00) U6 PIN 200 Notes: 1. All dimensions are in inches (millimeters); MAX/MIN or TYP where ...

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