SIR-341ST3FF Rohm Semiconductor, SIR-341ST3FF Datasheet

EMITTER IR 940NM RADIAL

SIR-341ST3FF

Manufacturer Part Number
SIR-341ST3FF
Description
EMITTER IR 940NM RADIAL
Manufacturer
Rohm Semiconductor
Datasheet
1.SIR-341ST3FF.pdf (3 pages)

Specifications of SIR-341ST3FF

Current - Dc Forward (if)
75mA
Radiant Intensity (ie) Min @ If
5.6mW/sr @ 50mA
Wavelength
940nm
Voltage - Forward (vf) Typ
1.5V
Viewing Angle
32°
Orientation
Top View
Mounting Type
Through Hole
Package / Case
T-1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
511-1344
SIR-341ST3F
Infrared light emitting diode, top view type
The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and
a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it
ideal for compact optical control equipment.
Applications
Optical control equipment
Light source for remote control devices
Features
1) Compact (3.1mm).
2) High efficiency, high output P
3) Wide radiation angle  1/216deg.
4) Peak wavelength well suited to silicon detectors (
5) Good current-optical output linearity.
6) Long life, high reliability.
Absolute maximum ratings (Ta = 25C)
Electrical and optical characteristics (Ta = 25C)
○
∗ Pulse width=0.1msec, duty ratio 1%
c
www.rohm.com
Forward current
Reverse voltage
Power dissipation
Pulse forward current
Operating temperature
Storage temperature
Optical output
Emitting strength
Forward voltage
Reverse current
Peak light emitting wavelength
Spectral line half width
Half-viewing angle
Response time
Cut-off frequency
SIR-341ST3F
2010 ROHM Co., Ltd. All rights reserved.
Parameter
Parameter
O
8.4mW (I
Symbol
θ
tr·tf
P
Δλ
V
λ
Symbol
1 / 2
I
I
f
E
R
C
O
P
F
Topr
Tstg
I
V
P
FP
I
F
R
D
F
∗
50mA).
Min.
5.6
−
−
−
−
−
−
−
−
−25 to +85
−40 to +85
P
18.1
Typ.
940nm).
940
±16
8.4
1.3
1.0
1.0
40
Limits
−
100
500
75
5
Max.
1.5
10
−
−
−
−
−
−
−
1/2
mW/sr
MHz
Unit
mW
deg
nm
nm
μA
μs
V
Unit
mW
Dimensions (Unit : mm)
mA
mA
°C
°C
V
I
I
I
V
I
I
I
I
I
F
F
F
F
F
F
F
F
=50mA
=50mA
=50mA
R
=50mA
=50mA
=50mA
=50mA
=50mA
=3V
4−0.6
2−
0.5
1
φ3.8±0.3
(2.5)
φ3.5
Conditions
2
φ3.1±0.2
Notes:
1.
2. Dimension in parenthesis are
1
Unspecified tolerance
shall be ±0.2.
show for reference.
Anode
2010.06 - Rev.B
2
Cathode

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SIR-341ST3FF Summary of contents

Page 1

... Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors small and at the same time has a wide radiation angle, marking it ideal for compact optical control equipment.  ...

Page 2

... SIR-341ST3F Electrical and optical characteristic curves 100 100 AMBIENT TEMPERATURE : Ta (°C) Fig.1 Forward current falloff 100 (mA) FORWARD CURRENT : I F Fig.4 Emitting strength vs. forward current 0° 10° 20° 30° 40° 50° 60° 70° 80° 90° 100 10° 20° 30° 40° 50° 60° 70° 80° 90° ...

Page 3

No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...

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