TMP86C909XB Toshiba, TMP86C909XB Datasheet - Page 147

• Manufacturer Part Number: TMP86C909XB
• Description: EMULATION CHIP FOR TMP86F SDIP
• Manufacturer: Toshiba

Specifications of TMP86C909XB

• Accessory Type: Adapter
• For Use With/related Products: TMP86F SDIP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

14.1 Flash Memory Control
14.1 Flash Memory Control
Flash Memory Control Register
Flash Memory Standby Control Register
14.1.1 Flash Memory Command Sequence Execution Control (FLSCR<FLSMD>)
14.1.2 Flash Memory Standby Control (FLSSTB<FSTB>)
(0FFFH)
FLSSTB
(0FE9H)
FLSCR
resister (FLSSTB).
The flash memory is controlled via the flash memory control register (FLSCR) and flash memory stanby control
Note 1: The command sequence of the flash memory can be executed only when FLSMD="0011B". In other cases, any attempts
Note 2: FLSMD must be set to either "1100B" or "0011B".
Note 3: Bits 3 through 0 in FLSCR are always read as don’t care.
Note 1: When FSTB is set to 1, do not execute the read/write instruction to the flash memory because there is a possibility that the
Note 2: If an interrupt is issued when FSTB is set to 1, FSTB is initialized to 0 automatically and then the vector area of the flash
Note 3: If the IDLE0/1/2, SLEEP0/1/2 or STOP mode is activated when FSTB is set to 1, FSTB is initialized to 0 automatically. In
ation. This write protection feature is realized by disabling flash memory command sequence execution via the
flash memory control register (write protect). To enable command sequence execution, set FLSCR<FLSMD>
to “0011B”. To disable command sequence execution, set FLSCR<FLSMD> to “1100B”. After reset,
FLSCR<FLSMD> is initialized to “1100B” to disable command sequence execution. Normally,
FLSCR<FLSMD> should be set to “1100B” except when the flash memory needs to be written or erased.
IDLE0/1/2, SLEEP0/1/2 or STOP mode, the steady-state current of the flash memory is cut off automatically.
or SLOW1/2 mode, the current can be cut off by the control of the register. To cut off the steady-state current of
the flash memory, set FLSSTB<FSTB> to “1” by the control program in the RAM area. The procedures for
controlling the FLSSTB register are explained below.
write control program executed in the RAM area.)
The flash memory can be protected from inadvertent write due to program error or microcontroller misoper-
Low power consumption is enabled by cutting off the steady-state current of the flash memory. In the
When the program is executed in the RAM area (without accessing the flash memory) in the NORMAL 1/2
(Steps1 and 2 are controlled by the program in the flash memory, and steps 3 through 8 are controlled by the
FLSMD
to execute the command sequence are ineffective.
expected data is not read or the program is not operated correctly. If executing the read/write instruction, FSTB is initial-
ized to 0 automatically.
memory is read.
the IDLE0/1/2, SLEEP0/1/2 or STOP mode, the standby function operates regardless of FSTB setting.
FSTB
7
7
Flash memory command sequence exe-
cution control
Flash memory standby control
6
6
FLSMD
5
5
4
4
Page 136
3
3
1100: Disable command sequence execution
0011: Enable command sequence execution
Others: Reserved
0: Disable the standby function.
1: Enable the standby function.
2
2
1
1
FSTB
0
0
(Initial value : 1100 ****)
(Initial value : **** ***0)
TMP86F409NG
Write
R/W
only