TMP86C909XB Toshiba, TMP86C909XB Datasheet - Page 149

• Manufacturer Part Number: TMP86C909XB
• Description: EMULATION CHIP FOR TMP86F SDIP
• Manufacturer: Toshiba

Specifications of TMP86C909XB

• Accessory Type: Adapter
• For Use With/related Products: TMP86F SDIP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

14.2 Command Sequence
Table 14-1 Command Sequence
14.2 Command Sequence
1
2
3
4
5
6
14.2.1 Byte Program
14.2.2 Sector Erase (4-kbyte Erase)
Product ID Entry
(4-kbyte Erase)
Product ID Exit
Product ID Exit
as shown in Table 14-1. Addresses specified in the command sequence are recognized with the lower 12 bits
(excluding BA, SA, and FF7FH used for read protection). The upper 4 bits are used to specify the flash memory
area,
Byte program
Read Protect
Sector Erase
Chip Erase
(All Erase)
Command
Sequence
The command sequence in the MCU and the serial PROM modes consists of six commands (JEDEC compatible),
Note 1: Set the address and data to be written.
Note 2: The area to be erased is specified with the upper 4 bits of the address.
in the 4th bus write cycle. Each byte can be programmed in a maximum of 40 µs. The next command sequence
cannot be executed until the write operation is completed. To check the completion of the write operation, per-
form read operations repeatedly until the same data is read twice from the same address in the flash memory.
During the write operation, any consecutive attempts to read from the same address is reversed bit 6 of the data
(toggling between 0 and 1).
by the upper 4 bits of the 6th bus write cycle address. For example, to erase 4 kbytes from F000H to FFFFH,
specify one of the addresses in F000H-FFFFH as the 6th bus write cycle. The sector erase command is effec-
tive only in the MCU and serial PROM modes, and it cannot be used in the parallel PROM mode.
erase operation is completed. To check the completion of the erase operation, perform read operations repeat-
edly for data polling until the same data is read twice from the same address in the flash memory. During the
erase operation, any consecutive attempts to read from the same address is reversed bit 6 of the data (toggling
between 0 and 1).
This command writes the flash memory for each byte unit. The addresses and data to be written are specified
Note:To rewrite data to Flash memory addresses at which data (including FFH) is already written, make sure to
This command erases the flash memory in units of 4 kbytes. The flash memory area to be erased is specified
A maximum of 30 ms is required to erase 4 kbytes. The next command sequence cannot be executed until the
erase the existing data by "sector erase" or "chip erase" before rewriting data.
Address
555H
555H
555H
555H
555H
555H
XXH
1st Bus Write
Cycle
Data
AAH
AAH
AAH
AAH
AAH
AAH
F0H
Address
AAAH
AAAH
AAAH
AAAH
AAAH
AAAH
2nd Bus Write
-
Cycle
Data
55H
55H
55H
55H
55H
55H
-
Address
Page 138
555H
555H
555H
555H
555H
555H
3rd Bus Write
-
Cycle
Data
A0H
80H
80H
90H
F0H
A5H
-
Address
(Note 1)
FF7FH
555H
555H
BA
4th Bus Write
-
-
-
Cycle
(Note 1)
Data
Data
AAH
AAH
00H
-
-
-
Address
AAAH
AAAH
5th Bus Write
-
-
-
-
-
Cycle
Data
55H
55H
-
-
-
-
-
TMP86F409NG
Address
(Note 2)
555H
SA
6th Bus Write
-
-
-
-
-
Cycle
Data
30H
10H
-
-
-
-
-