DS32EV100-EVK National Semiconductor, DS32EV100-EVK Datasheet - Page 3

• Manufacturer Part Number: DS32EV100-EVK
• Description: KIT EVALUATION FOR DS32EV100
• Manufacturer: National Semiconductor

Specifications of DS32EV100-EVK

• Main Purpose: Interface, Cable Equalizer
• Utilized Ic / Part: DS32EV100
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Secondary Attributes: -
• Embedded: -
• Primary Attributes: -

POWER
P
N
LVTTL DC SPECIFICATIONS
V
V
V
V
I
I
CML RECEIVER INPUTS (IN+, IN−)
V
V
V
V
R
IN
IN-P
Symbol
IH
IL
OH
OL
TX
INTRE
DDTX
ICMDC
LI
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Electrical Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified. (Note 2,3)
Supply Voltage (V
CMOS Input Voltage
CMOS Output Voltage
CML Input/Output Voltage
Junction Temperature
Storage Temperature
Lead Temperature
Soldering, 4 sec
Power Supply
Consumption
Supply Noise
Tolerance (Note 4)
High Level Input
Voltage
Low Level Input
Voltage
High Level Output
Voltage
Low Level Output
Voltage
Input Current
Input Leakage Current
with Internal Pull-
Down/Up Resistors
Source Transmit
Launch Signal Level
(IN diff)
Input Threshold
Voltage
Supply Voltage of
Transmitter to EQ
Input Common-Mode
Voltage
Differential Input
Return Loss
Parameter
DD
)
V
V
50 Hz – 100 Hz
100 Hz – 10 MHz
10 MHz – 1.6GHz
V
V
I
I
I
V
V
V
V
AC-Coupled or DC-Coupled Requirement,
Differential measurement at point A.
(Figure 1)
Differential measurement at point B.
(FIgure 1)
DC-Coupled Requirement
DC-Coupled Requirement
Differential measurement at point A.
(Figure 1), (Note 7)
100 MHz – 1.6 GHz, with fixture’s effect de-
embedded
OH
OH
OL
DD2.5
DD3.3
DD2.5
DD3.3
IN
IN
IN
IN
= 3mA
= –3mA, V
= –3mA, V
= V
= GND
= V
= GND, with internal pull-up resistors
DD
DD
, with internal pull-down resistors
−65°C to +150°C
−0.5V to +4.0V
−0.5V to +4.0V
–0.5V to +4.0V
–0.5V to +4.0V
DD2.5
DD3.3
(Note 1)
Conditions
+150°C
+260°C
3
Supply Voltage (Note 9)
Ambient Temperature
V
V
Recommended Operating
Conditions
ESD Rating
Thermal Resistance, θ
DD2.5
DD3.3
HBM, 1.5 kΩ, 100 pF
EIAJ, 0Ω, 200 pF
No Airflow
to GND
to GND
V
DDTX
−0.3
Min
−15
–20
400
1.6
2.0
2.0
2.4
1.6
-0.8
JA
,
(Note 2)
+1.8
Typ
100
140
100
+95
120
40
10
10
0
2.375
Min
−40
3.0
V
Typ
2.5
3.3
DDTX
25
V
V
1600
Max
150
200
+15
V
DD2.5
DD3.3
0.8
0.4
DD
-0.2
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2.625
Max
+85
3.6
40 °C/W
> 250 V
> 8 kV
mV
mV
mV
mV
mV
Units
mW
mW
µA
µA
µA
µA
dB
V
V
V
V
V
V
V
V
Units
P-P
P-P
P-P
P-P
P-P
°C
V
V