AD8432-EVALZ Analog Devices Inc, AD8432-EVALZ Datasheet - Page 5

BOARD EVALUATION FOR AD8432

AD8432-EVALZ

Manufacturer Part Number
AD8432-EVALZ
Description
BOARD EVALUATION FOR AD8432
Manufacturer
Analog Devices Inc
Datasheet

Specifications of AD8432-EVALZ

Channels Per Ic
2 - Dual
Amplifier Type
Voltage Feedback
Output Type
Differential
Slew Rate
295 V/µs
-3db Bandwidth
200MHz
Current - Output / Channel
77mA
Operating Temperature
-40°C ~ 85°C
Current - Supply (main Ic)
24mA
Voltage - Supply, Single/dual (±)
4.5 V ~ 5.5 V
Board Type
Fully Populated
Utilized Ic / Part
AD8432
Silicon Manufacturer
Analog Devices
Application Sub Type
Noise Amplifier
Kit Application Type
Amplifier
Silicon Core Number
AD8432
Kit Contents
Board
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
Voltage
Power Dissipation
Temperature
Package Glass Transition Temperature (T
Lead Temperature (Soldering, 60 sec)
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θ
soldered in a circuit board for surface-mount packages. The θ
value in Table 3 assumes a 4-layer JEDEC standard board with
zero airflow.
Table 3. Thermal Resistance
Parameter
40-Lead LFCSP
1
4-layer JEDEC board (2S2P).
JA
Supply Voltage
Input Voltage
Operating Temperature
Storage Temperature
is specified for the worst-case conditions, that is, a device
θ
57.9
JA
1
θ
11.2
JC
G
)
θ
35.9
JB
Rating
5.5 V
0 V to VPS
120 mW
–40°C to +85°C
–65°C to +150°C
150°C
300°C
Ψ
1.1
JT
Unit
°C/W
Rev. B | Page 5 of 28
JA
MAXIMUM POWER DISSIPATION
The maximum safe power dissipation for the AD8432 is limited
by the associated rise in junction temperature (T
approximately 150°C, which is the glass transition temperature,
the properties of the plastic change. Even temporarily exceeding
this temperature limit may change the stresses that the package
exerts on the die, permanently shifting the parametric performance
of the amplifiers. Exceeding a temperature of 150°C for an
extended period can cause changes in silicon devices, potentially
resulting in a loss of functionality.
ESD CAUTION
J
) on the die. At
AD8432

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