BD638 Inchange Semiconductor, BD638 Datasheet
BD638
Manufacturer Part Number
BD638
Description
Silicon PNP Power Transistor
Manufacturer
Inchange Semiconductor
Datasheet
1.BD638.pdf
(2 pages)
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INCHANGE Semiconductor
isc
DESCRIPTION
·DC Current Gain -
·Collector-Emitter Breakdown Voltage-
·Complement to Type BD637
APPLICATIONS
·Designed for amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(T
isc Website：www.iscsemi.cn
SYMBOL
: h
: V
V
V
V
T
I
P
T
CBO
CEO
I
CM
EBO
I
stg
C
B
C
FE
J
(BR)CEO
B
Silicon PNP Power Transistor
= 40(Min.)@ I
= -80V(Min.)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@ T
Collector Power Dissipation
@ T
Junction Temperature
Storage Temperature Range
a
C
=25℃
=25℃
C
PARAMETER
= -
25mA
a
=25
℃)
-55~150
VALUE
-100
-0.3
150
-80
30
-5
-2
-5
2
UNIT
W
℃
℃
V
V
V
A
A
A
isc
Product Specification
BD638
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BD638 Summary of contents
Page 1
... Base Current-Continuous B B Collector Power Dissipation @ T =25℃ Collector Power Dissipation @ T =25℃ Junction Temperature J Storage Temperature Range T stg isc Website：www.iscsemi.cn =25 ℃) a VALUE UNIT -100 ℃ 150 ℃ -55~150 isc Product Specification BD638 ...
Page 2
... Website：www.iscsemi.cn isc Product Specification CONDITIONS I = -30mA -0.1mA -1mA -1A -0. -1A - -100V -25mA - -1A - BD638 MIN MAX UNIT -80 V -100 -0.6 V -1 ...