bu102 Inchange Semiconductor Company, bu102 Datasheet

bu102

Manufacturer Part Number

bu102

Description

Silicon Npn Power Transistors

Manufacturer

Inchange Semiconductor Company

Datasheet

1.BU102.pdf (3 pages)

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Company:

BOSTOCK HK LIMITED

Part Number:

BU102

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Inchange Semiconductor

Silicon NPN Power Transistors

DESCRIPTION

・With TO-3 package

・V

APPLICATIONS

・Designed for horizontal deflection

PINNING(see fig.2)

Absolute maximum ratings(Ta=

SYMBOL

output stage of CTV receivers

CEO(sus)

CBO

CEO

EBO

stg

=150V (min)

Base

Emitter

Collector

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collectorl power dissipation

Junction temperature

Storage temperature

DESCRIPTION

PARAMETER

℃)

Open emitter

Open base

Open collector

=25℃

Fig.1 simplified outline (TO-3) and symbol

CONDITIONS

Product Specification

-55~150

VALUE

400

150

100

150

BU102

UNIT

℃

・

Related parts for bu102

bu102 Summary of contents

Page 1

... C P Collectorl power dissipation C T Junction temperature j T Storage temperature stg Fig.1 simplified outline (TO-3) and symbol ℃) CONDITIONS Open emitter Open base Open collector T =25℃ C Product Specification BU102 ・ VALUE UNIT 400 V 150 100 W ℃ 150 ℃ -55~150 ...

Page 2

... CONDITIONS I =100mA =1mA =1mA A;I =1 A;I =1 =400V =100V = Product Specification BU102 MIN TYP. MAX UNIT 150 400 V 2.0 V 2.5 V 0.1 mA 1 120 ...

Page 3

... Inchange Semiconductor Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Product Specification BU102 ...

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