BU522 Inchange Semiconductor, BU522 Datasheet

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BU522

Manufacturer Part Number
BU522
Description
Silicon Darlington NPN Power Transistor
Manufacturer
Inchange Semiconductor
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BU522
Manufacturer:
ST
0
Part Number:
BU52272NUZ-ZAE2
Manufacturer:
ROHM/罗姆
Quantity:
20 000
INCHANGE Semiconductor
isc
DESCRIPTION
·High Voltage
·Low Collector Saturation Voltage-
APPLICATIONS
·Designed for use in ignition circuit.
ABSOLUTE MAXIMUM RATINGS (T
THERMAL CHARACTERISTICS
isc Website:www.iscsemi.cn
SYMBOL
SYMBOL
V
: V
CER(SUS)
R
V
V
V
T
P
th j-c
CER
CBO
EBO
I
I
T
CE(sat)
C
stg
B
Silicon Darlington NPN Power Transistor
C
j
B
= 2.5V @ I
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
@T
Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Case
C
=25℃
C
PARAMETER
= 4A
PARAMETER
a
=25
)
-55~150
VALUE
350
375
400
150
75
5
7
2
MAX
1.67
UNIT
UNIT
℃/W
W
V
V
V
V
A
A
isc
Product Specification
BU522

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BU522 Summary of contents

Page 1

... C T Junction Temperature j T Storage Temperature Range stg THERMAL CHARACTERISTICS SYMBOL PARAMETER Thermal Resistance, Junction to Case R th j-c isc Website:www.iscsemi.cn =25 ℃ VALUE UNIT 350 V 375 V 400 ℃ 150 ℃ -55~150 MAX UNIT ℃/W 1.67 isc Product Specification BU522 ...

Page 2

... 4A 80mA 4A 80mA 350V 270Ω 400V 5V 2.5A 0.3A 10V 0.1MHz E CB test BU522 MIN TYP. MAX UNIT 350 V 2.5 V 2.5 V 1 250 7.5 MHz 150 pF ...

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