BU522 Inchange Semiconductor, BU522 Datasheet
BU522
Manufacturer Part Number
BU522
Description
Silicon Darlington NPN Power Transistor
Manufacturer
Inchange Semiconductor
Datasheet
1.BU522.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BU52272NUZ-ZAE2
Manufacturer:
ROHM/罗姆
Quantity:
20 000
INCHANGE Semiconductor
isc
DESCRIPTION
·High Voltage
·Low Collector Saturation Voltage-
APPLICATIONS
·Designed for use in ignition circuit.
ABSOLUTE MAXIMUM RATINGS (T
THERMAL CHARACTERISTICS
isc Website：www.iscsemi.cn
SYMBOL
SYMBOL
V
: V
CER(SUS)
R
V
V
V
T
P
th j-c
CER
CBO
EBO
I
I
T
CE(sat)
C
stg
B
Silicon Darlington NPN Power Transistor
C
j
B
= 2.5V @ I
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
@T
Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Case
C
=25℃
C
PARAMETER
= 4A
PARAMETER
a
=25
℃
)
-55~150
VALUE
350
375
400
150
75
5
7
2
MAX
1.67
UNIT
UNIT
℃/W
W
℃
℃
V
V
V
V
A
A
isc
Product Specification
BU522
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BU522 Summary of contents
Page 1
... C T Junction Temperature j T Storage Temperature Range stg THERMAL CHARACTERISTICS SYMBOL PARAMETER Thermal Resistance, Junction to Case R th j-c isc Website：www.iscsemi.cn =25 ℃ VALUE UNIT 350 V 375 V 400 ℃ 150 ℃ -55~150 MAX UNIT ℃/W 1.67 isc Product Specification BU522 ...
Page 2
... 4A 80mA 4A 80mA 350V 270Ω 400V 5V 2.5A 0.3A 10V 0.1MHz E CB test BU522 MIN TYP. MAX UNIT 350 V 2.5 V 2.5 V 1 250 7.5 MHz 150 pF ...