IRF5803D2 International Rectifier, IRF5803D2 Datasheet
IRF5803D2
Specifications of IRF5803D2
Available stocks
Related parts for IRF5803D2
IRF5803D2 Summary of contents
Page 1
... Pulse width 400µs – duty cycle 2% ƒ Surface mounted on 1 inch square copper board, t www.irf.com TM FETKY Power and = 25°C Unless Otherwise Noted -10V GS @ -10V GS 10sec. PD- 94016 IRF5803D2 MOSFET & Schottky Diode -40V DSS 112m 6 DS(on Schottky Vf = 0.51V SO-8 Maximum Units -3.4 A -2.7 -27 2 ...
Page 2
... IRF5803D2 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...
Page 3
... Fig 2. Typical Output Characteristics 2 1 150 C ° J 1.0 0.5 = -25V 0.0 -60 -40 -20 6.0 7.0 8.0 Fig 4. Normalized On-Resistance IRF5803D2 TOP BOTTOM - 2.7V -2.7V 20µs PULSE WIDTH Tj = 125° Drain-to-Source Voltage (V) -3. -10V 100 120 140 160 ° Junction Temperature ( C) J Vs. Temperature ...
Page 4
... IRF5803D2 2000 0V 100 KHZ C iss = SHORTED C rss = C gd 1500 C oss = Ciss 1000 500 Coss Crss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 T = 150 C ° 0.1 0.4 0.8 -V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage 4 Power Mosfet Characteristics 100 Fig 6 ...
Page 5
... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com Power Mosfet Characteristics Fig 10a. Switching Time Test Circuit V GS 10% 125 150 ° 90 Fig 10b. Switching Time Waveforms 0.001 0.01 0 Rectangular Pulse Duration (sec) 1 IRF5803D2 D.U. Pulse Width µs Duty Factor ...
Page 6
... IRF5803D2 0.20 0.15 0. -3.4A 0.05 0.00 4.0 8.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. Basic Gate Charge Waveform 6 Power Mosfet Characteristics 0.40 0.30 0.20 0.10 0.00 12.0 16.0 0.0 Fig 13. Typical On-Resistance Vs. 12V V GS Fig 14b. Gate Charge Test Circuit VGS = -4 ...
Page 7
... -250µA 2.4 2.0 1.6 -75 -50 - Temperature ( °C ) Fig 15. Typical Vgs(th) Vs. Junction Temperature www.irf.com Power Mosfet Characteristics 0.001 75 100 125 150 Fig 16. Typical Power Vs. Time IRF5803D2 0.010 0.100 1.000 10.000 100.000 Time (sec) 7 ...
Page 8
... IRF5803D2 ard V o lta Fig Maximum Forward Voltage Drop Characteristics 8 Schottky Diode Characteristics 0° 5° 5°C J Reverse Current Vs. Reverse Voltage Fig Typical Junction Capacitance 0°C J 125 °C 1 00°C 75°C 50 °C 25° Reverse V oltag Fig Typical Values 25° Reverse V oltage - Vs. Reverse Voltage www ...
Page 9
... Notes: 1. Duty factor Peak 0.001 0.01 0 Rectangular Pulse Duration (sec thJA = 62.5 °C/W DC see note (4) S quare wave ( D = 0.50 Rated V R applied Average Forward Current - I F(AV) (A) Fig.21 - Maximum Allowable Ambient Temp. Vs. Forward Current ) REV thJA / @ ( F(AV D 80% rated IRF5803D2 thJA 100 6 9 ...
Page 10
... IRF5803D2 SO-8 Package Details 0.25 [.010 NOT ES: 1. DIMENSIONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENSION: MILLIMET ER 3. DIMENSIONS ARE SHOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS . MOLD PROTRUS IONS NOT T O EXCEED 0.15 [.006]. ...
Page 11
... IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information.03/01 IRF5803D2 TAC Fax: (310) 252-7903 11 ...