IRF5800 International Rectifier, IRF5800 Datasheet
IRF5800
Specifications of IRF5800
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IRF5800 Summary of contents
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... Junction and Storage Temperature Range J, STG Thermal Resistance Parameter R Maximum Junction-to-Ambient JA www.irf.com HEXFET Top View 60% DS(on) reduction DS(on) @ -4. -4. 150 ƒ 93850A IRF5800 ® Power MOSFET -30V DSS 0.085 S DS(on) TSOP-6 Max. Units -30 V -4.0 -3.2 A -32 2.0 1.3 0.016 W/°C 20.6 mJ ± °C Max ...
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Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...
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VGS TOP -15V -10V -7.0V -5.5V -4.5V -4.0V 10 -3.5V BOTTOM -2.7V 1 -2.70V 0.1 20µs PULSE WIDTH 0.01 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ° ...
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1MHz iss rss oss ds gd 600 C iss 400 200 C oss C rss ...
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T , Case Temperature C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 ...
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-4.0A 0.08 0.04 2.0 4.0 6.0 8.0 10.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage 6 0.25 0.20 0.15 0.10 0.05 0.00 12.0 14.0 16.0 0 Fig ...
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www.irf.com 7 ...
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... IRF5852 3I = IRF5805 3J = IRF5806 DATE CODE EXAMPLES: YWW = 9603 = 6C YWW = 9632 = FF Notes : T his part marking information applies to devices produced after 02/26/2001 PART NUMBER PART NUMB ER CODE REFERENCE SI3443DV B = IRF5800 C = IRF5850 D = IRF5851 E = IRF5852 I = IRF5805 J = IRF5806 K = IRF5810 L = IRF5804 M = IRF5803 N = IRF5820 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105 ...