IRF5802 International Rectifier, IRF5802 Datasheet

MOSFET N-CH 150V 900MA 6TSOP

IRF5802

Manufacturer Part Number
IRF5802
Description
MOSFET N-CH 150V 900MA 6TSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF5802

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.2 Ohm @ 540mA, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
900mA
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
6.8nC @ 10V
Input Capacitance (ciss) @ Vds
88pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
Micro6™(TSOP-6)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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l
Benefits
l
l
l
Thermal Resistance
Applications
Absolute Maximum Ratings
www.irf.com
I
I
I
P
V
dv/dt
T
T
R
Notes  through † are on page 8
D
D
DM
J
STG
D
GS
@ T
@ T
JA
Effective C
App. Note AN1001)
and Current
High frequency DC-DC converters
Low Gate to Drain Charge to Reduce
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
@T
Switching Losses
A
A
A
= 25°C
= 70°C
= 25°C
OSS
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation„
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt †
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Maximum Junction-to-Ambient
to Simplify Design, (See
Parameter
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
D
D
G
V
2
3
1
150V
DSS
300 (1.6mm from case )
HEXFET
1.2 @V
-55 to + 150
6
5
4
R
Max.
Max.
62.5
0.02
DS(on)
D
D
S
± 30
0.9
0.7
7.0
2.0
7.1
®
GS
Power MOSFET
max
= 10V
IRF5802
TSOP-6
PD- 94086
0.9A
Units
Units
W/°C
°C/W
I
V/ns
D
°C
W
A
V
1
1/23/01

Related parts for IRF5802

IRF5802 Summary of contents

Page 1

... Thermal Resistance Parameter R Maximum Junction-to-Ambient JA Notes  through † are on page 8 www.irf.com SMPS MOSFET HEXFET V DSS 150V 1 10V GS @ 10V GS - 150 300 (1.6mm from case ) „ PD- 94086 IRF5802 ® Power MOSFET R max I DS(on 10V 0. TSOP-6 Max. Units 0.9 0.7 A 7.0 2.0 W 0.02 W/° ...

Page 2

... IRF5802 Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25°C (unless otherwise specified) ...

Page 3

... TOP BOTTOM 1 ° 0.1 100 0.1 V Fig 2. Typical Output Characteristics 2.5 0. 2.0 ° 1.5 1.0 0.5 0 -60 -40 -20 Fig 4. Normalized On-Resistance IRF5802 VGS 15V 12V 10V 8.0V 7.5V 7.0V 6.5V 6.0V 6.0V 20µs PULSE WIDTH ° 150 Drain-to-Source Voltage ( 10V ...

Page 4

... IRF5802 1000 0V MHZ C iss = rss = oss = Ciss 100 Coss Crss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 10 ° 150 0.1 0.4 0.6 0.8 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage SHORTED 100 1000 Fig 6. Typical Gate Charge Vs. 100 10 1 0.1 ° ...

Page 5

... Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com R G Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 IRF5802 D.U. 10V µ d(off ...

Page 6

... IRF5802 2.80 2.40 2. 0.54A 1.60 1.20 0.80 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Current Regulator Same Type as D.U.T. V 50K 12V . D.U. 3mA Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test Circuit ...

Page 7

... WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR YEAR Y DATE 2001 CODE 2002 2 2003 3 2004 4 2005 1996 6 1997 7 1998 8 1999 9 XXXX 2000 0 BOT TOM WW = (27-52) IF PRECEDED BY A LET T ER YEAR Y 2001 A 2002 B 2003 C 2004 D 2005 E 1996 F 1997 G 1998 H 1999 J 2000 K IRF5802 WORK WEEK WORK WEEK ...

Page 8

... IRF5802 TSOP-6 Tape & Reel Information Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting T = 25° 23mH 0.54A ƒ Pulse width 400µs; duty cycle 2%. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 8 „ ...

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