IRF7476 International Rectifier, IRF7476 Datasheet

MOSFET N-CH 12V 15A 8-SOIC

IRF7476

Manufacturer Part Number
IRF7476
Description
MOSFET N-CH 12V 15A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7476

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 mOhm @ 15A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
1.9V @ 250µA
Gate Charge (qg) @ Vgs
40nC @ 4.5V
Input Capacitance (ciss) @ Vds
2550pF @ 6V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7476
Q1332195

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7476TRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF7476TRPBF
Quantity:
9 000
Company:
Part Number:
IRF7476TRPBF
Quantity:
28 000
Absolute Maximum Ratings
Benefits
l
l
l
Thermal Resistance
l
www.irf.com
Applications
Notes  through
Symbol
V
V
I
I
I
P
P
T
Symbol
R
R
l
D
D
DM
J
DS
GS
D
D
and Current
@ T
@ T
JL
JA
, T
Ultra-Low Gate Impedance
Very Low R
Fully Characterized Avalanche Voltage
@T
@T
High Frequency 3.3V and 5V input Point-
of-Load Synchronous Buck Converters for
Netcom and Computing Applications.
Power Management for Netcom,
Computing and Portable Applications.
STG
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
DS(on)
Drain-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Junction and Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient
Linear Derating Factor
Gate-to-Source Voltage
are on page 8
Parameter
Parameter

GS
GS
@ 10V
@ 10V
G
S
S
S
V
12V
DSS
1
2
3
4
T o p V ie w
Typ.
–––
–––
8.0
HEXFET
8
6
5
7
-55 to + 150
m
R
D
D
D
A
D
A
DS(on)
Max.
120
0.02
±12
2.5
1.6
12
15
12
@V
®
GS
IRF7476
max
Power MOSFET
Max.
= 4.5V
20
50
SO-8
PD - 94311
15A
W/°C
Units
Units
°C/W
I
D
°C
W
W
V
A
V
1
04/29/02

Related parts for IRF7476

IRF7476 Summary of contents

Page 1

... Junction-to-Drain Lead JL R Junction-to-Ambient JA Notes  through „ are on page 8 www.irf.com V DSS 12V 10V GS @ 10V GS  „ „ Typ. ––– „ ––– 94311 IRF7476 ® HEXFET Power MOSFET R max I DS(on 8 4.5V 15A SO-8 Max. Units 12 V ± ...

Page 2

... IRF7476 Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25°C (unless otherwise specified) ...

Page 3

... BOTTOM 1.5V 1 0.1 0.01 0.1 10 100 Fig 2. Typical Output Characteristics 2 1.5 1.0 0.5 0.0 -60 -40 3.5 4.0 Fig 4. Normalized On-Resistance IRF7476 V GS TOP 10V 8.0V 5.0V 4.5V 3.5V 2.7V 2.0V BOTTOM 1.5V 1.5V 20µs PULSE WIDTH Tj = 150° Drain-to-Source Voltage (V) 15A  ...

Page 4

... IRF7476 100000 0V MHZ C iss = SHORTED C rss = oss = 10000 C iss C oss 1000 C rss 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100  T = 150 ° 0.1 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage 100 Fig 6. Typical Gate Charge Vs. ...

Page 5

... Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 4.5V Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° 10 d(on) Fig 10b. Switching Time Waveforms  Notes: 1. Duty factor Peak T 0 Rectangular Pulse Duration (sec) 1 IRF7476 D.U. µ d(off ...

Page 6

... IRF7476 7.5 7 4.5V 7.0 6.8 6 Drain Current (A) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. V 50K 12V . D.U. 3mA Current Sampling Resistors Fig 13a&b. Basic Gate Charge Test Circuit and Waveform 20V Fig 14a&b. Unclamped Inductive Test circuit and Waveforms 6 15 ...

Page 7

... H 0.25 [.010 0.10 [.004 6.46 [.255] 3X 1.27 [.050] DATE CODE (YWW LAS T DIGIT OF THE YEAR WW = WEEK YWW XXXX LOT CODE F7101 PART NUMBER IRF7476 INCHES MILLIMET ERS DIM MIN MAX MIN MAX A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 ...

Page 8

... IRF7476 SO-8 Tape and Reel 8.1 ( .318 ) 7.9 ( .312 ) ING DIM ION : ION (IN CHES ). & ING D IME N SIO N : MIL LIM LIN EIA-481 & E IA-541. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting T = 25° 2.3mH 12A WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...

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