IRL2203S Vishay, IRL2203S Datasheet

IRL2203S

Manufacturer Part Number

IRL2203S

Description

MOSFET N-CH 30V 100A D2PAK

Manufacturer

Vishay

Series

HEXFET®r

Datasheet

1.IRL2203S.pdf (9 pages)

Specifications of IRL2203S

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

7 mOhm @ 60A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

100A

Vgs(th) (max) @ Id

2.5V @ 250µA

Gate Charge (qg) @ Vgs

110nC @ 4.5V

Input Capacitance (ciss) @ Vds

3500pF @ 25V

Power - Max

3.8W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRL2203S

Manufacturer:

Quantity:

6 800

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRL2203S

Manufacturer:

Quantity:

12 500

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Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The D

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

its low internal connection resistance and can dissipate

up to 2.0W in a typical surface mount application.

Absolute Maximum Ratings

Thermal Resistance

dv/dt

STG

Pak is suitable for high current applications because of

@ T

Logic-Level Gate Drive

Surface Mount

Advanced Process Technology

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Pak is a surface mount power package capable of

= 25°C

= 100°C

= 25°C

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Junction-to-Case

Junction-to-Ambient ( PCB Mounted,steady-state)**

Continuous Drain Current, V

Parameter

@ 10V

Typ.

300 (1.6mm from case )

–––

-55 to + 175

Max.

100

0.83

400

130

± 20

390

3.8

1.2

DS(on)

Max.

DSS

1.2

= 100A

= 0.007

= 30V

Units

W/°C

°C/W

V/ns

°C

Related parts for IRL2203S

IRL2203S Summary of contents

Page 1

Logic-Level Gate Drive Surface Mount Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...

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IRL2203S Vishay, IRL2203S Datasheet

IRL2203S

Specifications of IRL2203S

Available stocks

Related parts for IRL2203S

IRL2203S Summary of contents

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