M29F200BB-70N3 STMicroelectronics, M29F200BB-70N3 Datasheet
M29F200BB-70N3
Manufacturer Part Number
M29F200BB-70N3
Description
Manufacturer
STMicroelectronics
Datasheet
1.M29F200BB-70N3.pdf
(29 pages)
Specifications of M29F200BB-70N3
Case
TSOP-48
Date_code
2003+
Available stocks
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FEATURES SUMMARY
September 2005
7 MEMORY BLOCKS
PROGRAM/ERASE CONTROLLER
ERASE SUSPEND and RESUME MODES
UNLOCK BYPASS PROGRAM COMMAND
TEMPORARY BLOCK UNPROTECTION
MODE
LOW POWER CONSUMPTION
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
ELECTRONIC SIGNATURE
SINGLE 5V±10% SUPPLY VOLTAGE for
PROGRAM, ERASE and READ
OPERATIONS
ACCESS TIME: 45, 50, 70, 90ns
PROGRAMMING TIME
–
–
–
–
–
–
–
–
–
–
–
–
–
–
ECOPACK
8µs per Byte/Word typical
1 Boot Block (Top or Bottom Location)
2 Parameter and 4 Main Blocks
Embedded Byte/Word Program algorithm
Embedded Multi-Block/Chip Erase
algorithm
Status Register Polling and Toggle Bits
Ready/Busy Output Pin
Read and Program another Block during
Erase Suspend
Faster Production/Batch Programming
Standby and Automatic Standby
Defectivity below 1 ppm/year
Manufacturer Code: 0020h
Top Device Code M29F200BT: 00D3h
Bottom Device CodeM29F200BB: 00D4h
®
PACKAGES AVAILABLE
2 Mbit (256Kb x8 or 128Kb x16, Boot Block)
Figure 1. Packages
Single Supply Flash Memory
44
TSOP48 (N)
12 x 20mm
SO44 (MT)
1
M29F200BB
M29F200BT
1/29