Search results for "n-channel enhancement mode"
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Part Number:
BUK7606-75B
Description:
Standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK7607-30B
Description:
Standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK7607-55B
Description:
Standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK7608-40B
Description:
Standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK7609-55A
Description:
Standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK7609-75A
Description:
Standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK7610-100B
Description:
Standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK7610-55AL
Description:
Standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK7611-55B
Description:
Standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK7613-75B
Description:
Standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK7614-55A
Description:
Standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK7619-100B
Description:
Standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK761R8-30C
Description:
Standard level gate drive n-channel enhancement mode field-effect transistor (fet) in a plastic package using advanced trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK7620-100A
Description:
Standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK7620-55A
Description:
Standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK7623-75A
Description:
Standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK7624-55A
Description:
Standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK7626-100B
Description:
Standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK7628-55A
Description:
Standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK762R0-40C
Description:
Standard level gate drive n-channel enhancement mode field-effect transistor (fet) in a plastic package using advanced trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK762R7-30B
Description:
Standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK7635-100A
Description:
Standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK7635-55A
Description:
Standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK763R1-40B
Description:
Standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK763R4-30B
Description:
Standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK763R6-40C
Description:
Standard level gate drive n-channel enhancement mode field-effect transistor (fet) in a plastic package using advanced trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK7640-100A
Description:
Standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK764R0-55B
Description:
Standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using nxp high-performance automotive (hpa) trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK764R0-75C
Description:
Standard level gate drive n-channel enhancement mode field-effect transistor (fet) in a plastic package using advanced trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK764R3-40B
Description:
Standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK7660-100A
Description:
Standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK7675-100A
Description:
Standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK7675-55A
Description:
Standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK7880-55A
Description:
Standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using nxp general purpose automotive (gpa) trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK7905-40AI
Description:
Standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK7905-40AIE
Description:
Standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK7905-40ATE
Description:
Standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK7907-40ATC
Description:
Standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK7907-55AIE
Description:
Standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK7907-55ATE
Description:
Standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK7908-40AIE
Description:
Standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK7909-75AIE
Description:
Standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK7909-75ATE
Description:
Standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK794R1-40BT
Description:
Standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using nxp high-performance automotive (hpa) trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK7C06-40AITE
Description:
Standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK7C08-55AITE
Description:
Standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK7C10-75AITE
Description:
Standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK7E04-40A
Description:
Standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK7E07-55B
Description:
Standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using nxp high-performance automotive (hpa) trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
Part Number:
BUK7E11-55B
Description:
Standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology
Manufacturer:
NXP Semiconductors
Datasheet: