BUK7905-40AIE NXP Semiconductors, BUK7905-40AIE Datasheet

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK7905-40AIE

Manufacturer Part Number
BUK7905-40AIE
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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Part Number:
BUK7905-40AIE
Manufacturer:
NXP
Quantity:
81 000
Part Number:
BUK7905-40AIE
Manufacturer:
NXP
Quantity:
12 500
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS current sensing
and diodes for ElectroStatic Discharge (ESD) protection. This product has been designed
and qualified to the appropriate AEC standard for use in automotive critical applications.
Table 1.
[1]
Symbol Parameter
V
I
Static characteristics
R
I
D
D
DS
DSon
/I
sense
Electrostatically robust due to
integrated protection diodes
Low conduction losses due to low
on-state resistance
Q101 compliant
Electrical Power Assisted Steering
(EPAS)
Current is limited by power dissipation chip rating.
BUK7905-40AIE
N-channel TrenchPLUS standard level FET
Rev. 05 — 10 February 2009
drain-source voltage T
drain current
drain-source
on-state resistance
ratio of drain current
to sense current
Quick reference
Conditions
V
see
V
T
Figure 8
T
V
j
j
j
GS
GS
GS
≥ 25 °C; T
= 25 °C; see
> -55 °C; T
Figure
= 10 V; T
= 10 V; I
> 10 V
2; see
j
D
j
≤ 175 °C
mb
< 175 °C;
= 50 A;
Figure
= 25 °C;
Figure
7; see
Reduced component count due to
integrated current sensor
Suitable for standard level gate drive
sources
Variable Valve Timing for engines
3;
[1]
Min
-
-
-
450
Product data sheet
Typ
-
-
4.5
500
Max
40
155
5
550
Unit
V
A
mΩ

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BUK7905-40AIE Summary of contents

Page 1

... BUK7905-40AIE N-channel TrenchPLUS standard level FET Rev. 05 — 10 February 2009 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing and diodes for ElectroStatic Discharge (ESD) protection. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications ...

Page 2

... TO-220 BUK7905-40AIE_5 Product data sheet N-channel TrenchPLUS standard level FET Simplified outline SOT263B (TO-220) Rev. 05 — 10 February 2009 BUK7905-40AIE Graphic symbol sense Kelvin source MBL368 Version SOT263B © NXP B.V. 2009. All rights reserved ...

Page 3

... °C mb ≤ 10 µs; pulsed ° ≤ Ω sup °C; unclamped j(init) HBM 100 pF 1.5 kΩ Rev. 05 — 10 February 2009 BUK7905-40AIE Min Max - - see Figure 3 [1] - 155 [ [ Figure 3 - ...

Page 4

... T (°C) mb Fig 2. Continuous drain current as a function of mounting base temperature DC 10 Rev. 05 — 10 February 2009 BUK7905-40AIE 03ng16 50 100 150 200 T (°C) mb 03ng17 µs 100 µ 100 (V) © NXP B.V. 2009. All rights reserved. ...

Page 5

... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7905-40AIE_5 Product data sheet N-channel TrenchPLUS standard level FET Conditions vertical in still air see Figure Rev. 05 — 10 February 2009 BUK7905-40AIE Min Typ Max Unit - 0.55 K/W 03ni64 t p δ ...

Page 6

... °C; see Figure MHz °C; see Figure 1.2 Ω Ω °C G(ext) j Rev. 05 — 10 February 2009 BUK7905-40AIE Min Typ Max Unit 4 0.1 10 µ ...

Page 7

... ° ° see Figure /dt = -100 A/µ - ° Rev. 05 — 10 February 2009 BUK7905-40AIE Min Typ Max Unit - 2 7 0.85 1 224 - nC © NXP B.V. 2009. All rights reserved. ...

Page 8

... V 1.6 1 −60 300 400 I D (A) Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature Rev. 05 — 10 February 2009 BUK7905-40AIE 03ni88 (V) 03ni30 0 60 120 180 T (°C) j © NXP B.V. 2009. All rights reserved ...

Page 9

... Fig 10. Sub-threshold drain current as a function of gate-source voltage 03ni89 8 C (nF −1 75 100 (A) Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Rev. 05 — 10 February 2009 BUK7905-40AIE 03aa35 min typ max (V) GS 03ne67 C iss C oss C rss 2 ...

Page 10

... Fig 14. Gate-source voltage as a function of turn-on gate charge; typical values 03nn69 4 R D(Is)on (Ω (V) Fig 16. Drain-sense current on-state resistance as a function of gate-source voltage; typical values Rev. 05 — 10 February 2009 BUK7905-40AIE N-channel TrenchPLUS standard level FET (nC) G 03nk33 (V) © ...

Page 11

... Fig 17. Drain current as a function of source-drain diode voltage; typical values BUK7905-40AIE_5 Product data sheet N-channel TrenchPLUS standard level FET 100 175 ° °C 0 0.0 0.4 0.8 1 (V) Rev. 05 — 10 February 2009 BUK7905-40AIE 03ni91 1.6 © NXP B.V. 2009. All rights reserved ...

Page 12

... scale ( 15.8 6.4 10.3 15.0 2.4 1.7 15.2 5.9 9.7 13.5 1.6 REFERENCES JEDEC EIAJ 5-lead TO-220 Rev. 05 — 10 February 2009 BUK7905-40AIE N-channel TrenchPLUS standard level FET mounting base Q c (2) ∅ 0.8 3.8 4.3 3.0 2.6 0.5 0.6 3.6 4.1 2.7 2.2 EUROPEAN ISSUE DATE PROJECTION 01-01-11 © NXP B.V. 2009. All rights reserved. ...

Page 13

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK7905-40AIE separated from data sheet BUK71_7905_40AIE-04. BUK71_7905_40AIE-04 20040206 BUK71_7905_40AIE-03 20030523 ...

Page 14

... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 05 — 10 February 2009 BUK7905-40AIE © NXP B.V. 2009. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: Rev. 05 — 10 February 2009 Document identifier: BUK7905-40AIE_5 All rights reserved. ...

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