BUK7905-40ATE,127 NXP Semiconductors, BUK7905-40ATE,127 Datasheet

MOSFET N-CH 40V 75A TO220AB

BUK7905-40ATE,127

Manufacturer Part Number
BUK7905-40ATE,127
Description
MOSFET N-CH 40V 75A TO220AB
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK7905-40ATE,127

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
5 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
118nC @ 10V
Input Capacitance (ciss) @ Vds
4500pF @ 25V
Power - Max
272W
Mounting Type
Through Hole
Package / Case
TO-220-5 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.005 Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
155 A
Power Dissipation
272 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934057946127
BUK7905-40ATE
BUK7905-40ATE
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS diodes for
temperature sensing and ElectroStatic Discharge (ESD) protection. This product has been
designed and qualified to the appropriate AEC standard for use in automotive critical
applications.
Table 1.
Symbol
V
Static characteristics
R
S
V
V
DS
F(TSD)
F(TSD)
F(TSD)hys
DSon
Allows responsive temperature
monitoring due to integrated
temperature sensor
Electrostatically robust due to
integrated protection diodes
Electrical Power Assisted Steering
(EPAS)
BUK7905-40ATE
N-channel TrenchPLUS standard level FET
Rev. 02 — 10 February 2009
Quick reference
Parameter
drain-source voltage
drain-source on-state
resistance
temperature sense
diode temperature
coefficient
temperature sense
diode forward
voltage
temperature sense
diode forward
voltage hysteresis
Conditions
T
V
T
Figure 8
I
T
I
I
I
F
F
F
F
j
j
j
GS
= 250 µA; T
= 250 µA; T
≤ 250 µA; T
≥ 125 µA
≥ 25 °C; T
= 25 °C; see
≤ 175 °C
= 10 V; I
j
D
≤ 175 °C
j
j
j
= 50 A;
= 25 °C;
≥ -55 °C;
= 25 °C
Figure
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for standard level gate drive
sources
Variable Valve Timing for engines
7; see
Min
-
-
-1.4
648
25
Product data sheet
Typ
-
4.5
-1.54
658
32
Max
40
5
-1.68
668
50
Unit
V
mΩ
mV/K
mV
mV

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BUK7905-40ATE,127 Summary of contents

Page 1

... BUK7905-40ATE N-channel TrenchPLUS standard level FET Rev. 02 — 10 February 2009 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for temperature sensing and ElectroStatic Discharge (ESD) protection. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications ...

Page 2

... BUK7905-40ATE TO-220 plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead TO-220 BUK7905-40ATE_2 Product data sheet N-channel TrenchPLUS standard level FET Simplified outline SOT263B (TO-220) Rev. 02 — 10 February 2009 BUK7905-40ATE Graphic symbol mbl317 Version SOT263B © NXP B.V. 2009. All rights reserved ...

Page 3

... Figure 1 mb continuous = 5 ms; δ = 0.01 pulsed °C mb ≤ 10 µs; pulsed ° ≤ Ω sup °C; unclamped j(init) HBM 100 pF 1.5 kΩ Rev. 02 — 10 February 2009 BUK7905-40ATE Min Max - 40 - see Figure 3 [1] - 155 [ [ Figure 3 - 620 - 272 - -100 100 -55 ...

Page 4

... T (°C) mb Fig 2. Continuous drain current as a function of mounting base temperature DC 10 Rev. 02 — 10 February 2009 BUK7905-40ATE 03ng16 50 100 150 200 T (°C) mb 03ng17 µs 100 µ 100 (V) © NXP B.V. 2009. All rights reserved. ...

Page 5

... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7905-40ATE_2 Product data sheet N-channel TrenchPLUS standard level FET Conditions vertical in still air see Figure Rev. 02 — 10 February 2009 BUK7905-40ATE Min Typ Max Unit - 0.55 K/W 03ni64 t p δ ...

Page 6

... Figure 7; see Figure 250 µ ° ≥ -55 °C; T ≤ 175 ° 250 µ ≤ 250 µA; I ≥ 125 µ ° °C; see Figure MHz °C; see Figure 12 j Rev. 02 — 10 February 2009 BUK7905-40ATE Min Typ Max Unit 4 0.1 10 µ 250 µ ...

Page 7

... Ω °C G(ext) j from upper edge of mounting base to centre of die °C j from source lead to source bond pad ° ° see Figure /dt = -100 A/µ - ° Rev. 02 — 10 February 2009 BUK7905-40ATE Min Typ Max Unit - 115 - ns - 155 - ns - 110 - 0.85 1 224 - nC © NXP B.V. 2009. All rights reserved. ...

Page 8

... Drain-source on-state resistance as a function of gate-source voltage; typical values 03ni87 2 1.6 1 −60 300 400 I D (A) Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature Rev. 02 — 10 February 2009 BUK7905-40ATE 03ni88 (V) 03ni30 0 60 120 180 T (°C) j © NXP B.V. 2009. All rights reserved ...

Page 9

... T (°C) j Fig 10. Sub-threshold drain current as a function of gate-source voltage 03ni89 8 C (nF −1 75 100 (A) Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Rev. 02 — 10 February 2009 BUK7905-40ATE 03aa35 min typ max (V) GS 03ne67 C iss C oss C rss ...

Page 10

... S F (mV/K) −1.60 −1.50 −1.40 150 200 645 T (°C) j Fig 16. Temperature coefficient of temperature sense diode as a function of forward voltage; typical values Rev. 02 — 10 February 2009 BUK7905-40ATE N-channel TrenchPLUS standard level FET 03ni26 (nC) G 03ne85 max typ min 655 665 ...

Page 11

... Fig 17. Drain current as a function of source-drain diode voltage; typical values BUK7905-40ATE_2 Product data sheet N-channel TrenchPLUS standard level FET 100 175 ° °C 0 0.0 0.4 0.8 1 (V) Rev. 02 — 10 February 2009 BUK7905-40ATE 03ni91 1.6 © NXP B.V. 2009. All rights reserved ...

Page 12

... 15.8 6.4 10.3 15.0 2.4 1.7 15.2 5.9 9.7 13.5 1.6 REFERENCES JEDEC EIAJ 5-lead TO-220 Rev. 02 — 10 February 2009 BUK7905-40ATE N-channel TrenchPLUS standard level FET mounting base Q c (2) ∅ 0.8 3.8 4.3 3.0 2.6 0.5 0.6 3.6 4.1 2.7 2.2 ...

Page 13

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK7905-40ATE separated from data sheet BUK71_7905_40ATE-01. BUK71_7905_40ATE-01 20030820 (9397 750 11694) BUK7905-40ATE_2 ...

Page 14

... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 10 February 2009 BUK7905-40ATE © NXP B.V. 2009. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 10 February 2009 Document identifier: BUK7905-40ATE_2 All rights reserved. ...

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