BUK7905-40AI,127 NXP Semiconductors, BUK7905-40AI,127 Datasheet
BUK7905-40AI,127
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BUK7905-40AI
BUK7905-40AI
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BUK7905-40AI,127 Summary of contents
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... BUK7905-40AI N-channel TrenchPLUS standard level FET Rev. 02 — 16 February 2009 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications ...
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... TO-220 BUK7905-40AI_2 Product data sheet N-channel TrenchPLUS standard level FET Simplified outline SOT263B (TO-220) Rev. 02 — 16 February 2009 BUK7905-40AI Graphic symbol sense s Kelvin source 03nl64 Version SOT263B © NXP B.V. 2009. All rights reserved ...
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... V; see Figure mb GS ≤ 10 µs; pulsed; see ° °C; see Figure °C; mb ≤ 10 µs; pulsed ° ≤ Ω sup °C; unclamped j(init) HBM 100 pF 1.5 kΩ Rev. 02 — 16 February 2009 BUK7905-40AI Min Max - - [1] - 155 [ [ Figure 3 - 620 - 272 -55 175 -55 175 [1] - 155 [2] ...
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... T (°C) mb Fig 2. Continuous drain current as a function of mounting base temperature DC 10 Rev. 02 — 16 February 2009 BUK7905-40AI 03ng16 50 100 150 200 T (°C) mb 03ng17 µs 100 µ 100 (V) © NXP B.V. 2009. All rights reserved. ...
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... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7905-40AI_2 Product data sheet N-channel TrenchPLUS standard level FET Conditions vertical in still air see Figure Rev. 02 — 16 February 2009 BUK7905-40AI Min Typ Max Unit - 0.55 K/W 03ni64 t p δ ...
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... Figure MHz °C; see Figure 1.2 Ω Ω °C G(ext) j measured from upper edge of drain mounting base to center of die °C j measured from source lead to source bond pad °C j Rev. 02 — 16 February 2009 BUK7905-40AI Min Typ Max Unit 4 0.1 10 µ 500 µA ...
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... Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values 03ni87 2 1.6 1 −60 300 400 I D (A) Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature Rev. 02 — 16 February 2009 BUK7905-40AI Min Typ Max Unit - 0.85 1 224 - nC 03ni88 (V) 03ni30 ...
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... T (°C) j Fig 10. Sub-threshold drain current as a function of gate-source voltage 03ni89 8 C (nF −1 75 100 (A) Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Rev. 02 — 16 February 2009 BUK7905-40AI 03aa35 min typ max (V) GS 03ne67 C iss C oss C rss ...
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... V GS (V) Fig 14. Gate-source voltage as a function of turn-on gate charge; typical values 03nn69 4 R D(Is)on (Ω (V) Fig 16. Drain-sense current on-state resistance as a function of gate-source voltage; typical values Rev. 02 — 16 February 2009 BUK7905-40AI N-channel TrenchPLUS standard level FET (nC) G 03nk33 (V) © NXP B.V. 2009. All rights reserved. ...
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... Fig 17. Drain current as a function of source-drain diode voltage; typical values BUK7905-40AI_2 Product data sheet N-channel TrenchPLUS standard level FET 100 175 ° °C 0 0.0 0.4 0.8 1 (V) Rev. 02 — 16 February 2009 BUK7905-40AI 03ni91 1.6 © NXP B.V. 2009. All rights reserved ...
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... 15.8 6.4 10.3 15.0 2.4 1.7 15.2 5.9 9.7 13.5 1.6 REFERENCES JEDEC EIAJ 5-lead TO-220 Rev. 02 — 16 February 2009 BUK7905-40AI N-channel TrenchPLUS standard level FET mounting base Q c (2) ∅ 0.8 3.8 4.3 3.0 2.6 0.5 0.6 3.6 4.1 2.7 2.2 ...
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... Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. BUK7905_40AI-01 (9397 20040209 750 12346) BUK7905-40AI_2 Product data sheet N-channel TrenchPLUS standard level FET ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 16 February 2009 BUK7905-40AI © NXP B.V. 2009. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: Rev. 02 — 16 February 2009 Document identifier: BUK7905-40AI_2 All rights reserved. ...