BUK7905-40AIE NXP Semiconductors, BUK7905-40AIE Datasheet - Page 10

• Manufacturer Part Number: BUK7905-40AIE
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7905-40AIE_5
Product data sheet
Fig 13. Transfer characteristics: drain current as a
Fig 15. Drain-sense current ratio as a function of
I D /I sense
100
(A)
I D
600
550
500
450
400
75
50
25
0
function of gate-source voltage; typical values
gate-source voltage; typical values
0
4
8
2
175 °C
12
4
T j = 25 °C
16
V GS (V)
V GS (V)
03ni90
03nn69
Rev. 05 — 10 February 2009
6
20
Fig 14. Gate-source voltage as a function of turn-on
Fig 16. Drain-sense current on-state resistance as a
R D(Is)on
V
(V)
(Ω)
GS
10
4
3
2
1
0
8
6
4
2
0
gate charge; typical values
function of gate-source voltage; typical values
4
0
N-channel TrenchPLUS standard level FET
40
6
BUK7905-40AIE
V
DS
= 14 V
8
80
V GS (V)
32 V
Q
© NXP B.V. 2009. All rights reserved.
G
(nC)
03nk33
03ni26
10
120
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