BUK7C06-40AITE NXP Semiconductors, BUK7C06-40AITE Datasheet
BUK7C06-40AITE
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BUK7C06-40AITE Summary of contents
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... BUK7C06-40AITE N-channel TrenchPLUS standard level FET Rev. 05 — 16 February 2009 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing and diodes for ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications ...
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... D mounting base; connected to drain 3. Ordering information Table 3. Ordering information Type number Package Name Description BUK7C06-40AITE D2PAK plastic single-ended surface-mounted package (D2PAK); 7 leads (one lead cropped) BUK7C06-40AITE_5 Product data sheet BUK7C06-40AITE N-channel TrenchPLUS standard level FET Simplified outline ...
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... °C mb ≤ 10 µs; pulsed ° ≤ Ω sup °C; unclamped j(init) HBM 100 pF 1.5 kΩ Rev. 05 — 16 February 2009 BUK7C06-40AITE Min Max - - see Figure 3 [1] - 155 [ [ Figure 3 - 620 ...
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... D (A) 120 80 capped at 75A due to package 40 0 150 200 0 T (°C) mb Fig 2. Continuous drain current as a function of mounting base temperature DC 10 Rev. 05 — 16 February 2009 BUK7C06-40AITE 03ng16 50 100 150 200 T (°C) mb 03ni28 µs p 100 µ 100 (V) DS © ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7C06-40AITE_5 Product data sheet N-channel TrenchPLUS standard level FET Conditions mounted on printed-circuit board; minimum footprint see Figure 4 −4 −3 − Rev. 05 — 16 February 2009 BUK7C06-40AITE Min Typ Max Unit - - 50 K 0.55 K/W 03ni29 t p δ ...
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... T < 175 ° °C; see Figure MHz °C; see Figure 12 j Rev. 05 — 16 February 2009 BUK7C06-40AITE Min Typ Max Unit 4 ...
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... ° 03ni21 18 Label DSon (mΩ (V) DS Fig 6. of gate-source voltage; typical values Rev. 05 — 16 February 2009 BUK7C06-40AITE N-channel TrenchPLUS standard level FET Min Typ Max - 115 - - 155 - - 110 - - 2 7 0.85 1.2 - ...
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... T (°C) j Fig 10. Sub-threshold drain current as a function of gate-source voltage Rev. 05 — 16 February 2009 BUK7C06-40AITE N-channel TrenchPLUS standard level FET 03ni30 0 60 120 T (°C) j 03aa35 min typ max (V) GS © NXP B.V. 2009. All rights reserved. ...
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... ° (V) GS Fig 14. Gate-source voltage as a function of turn-on gate charge; typical values Rev. 05 — 16 February 2009 BUK7C06-40AITE N-channel TrenchPLUS standard level FET 03ne67 C iss C oss C rss − (V) DS 03ni26 ...
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... (V) GS Fig 18. Source current as a function of source-drain voltage; typical values Rev. 05 — 16 February 2009 BUK7C06-40AITE 03ne85 max typ min 655 665 675 V (mV) F 03ni27 = 175 °C 25 ° 0.4 0.8 1.2 V ...
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... N-channel TrenchPLUS standard level FET 2 scale max. 1.60 10.30 2.90 15.80 11 1.27 2.10 14.80 1.20 9.70 REFERENCES JEDEC JEITA Rev. 05 — 16 February 2009 BUK7C06-40AITE mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-03-09 06-03-16 © NXP B.V. 2009. All rights reserved. SOT427 ...
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... N-channel TrenchPLUS standard level FET Data sheet status Change notice Product data sheet - Product data sheet - Product data sheet - Product data sheet - Product data sheet - Rev. 05 — 16 February 2009 BUK7C06-40AITE Supersedes BUK7C06-40AITE_4 BUK7C06-40AITE_3 BUK7C06_40AITE-02 BUK7C06_40AITE-01 - © NXP B.V. 2009. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 05 — 16 February 2009 BUK7C06-40AITE © NXP B.V. 2009. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: Rev. 05 — 16 February 2009 Document identifier: BUK7C06-40AITE_5 All rights reserved. ...