BUK7C06-40AITE NXP Semiconductors, BUK7C06-40AITE Datasheet - Page 7

• Manufacturer Part Number: BUK7C06-40AITE
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 6.
BUK7C06-40AITE_5
Product data sheet
Symbol
t
t
t
t
L
L
Source-drain diode
V
t
Q
d(on)
r
d(off)
f
rr
Fig 5.
D
S
SD
r
(A)
I
D
300
200
100
0
function of drain-source voltage; typical values
Output characteristics: drain current as a
0
10.0
20.0
Characteristics
8.0
Parameter
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
source-drain voltage
reverse recovery time
recovered charge
2
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
4
…continued
6
Label is V
Conditions
V
R
measured from upper edge of drain
mounting base to centre of die; T
measured from source lead to source
bond pad; T
I
see
I
V
S
S
DS
G(ext)
DS
= 40 A; V
= 20 A; dI
Figure 18
= 30 V; R
= 30 V; T
8
GS
V
= 10 Ω; T
DS
03ni21
(V)
(V)
Rev. 05 — 16 February 2009
GS
j
S
10
= 25 °C
/dt = -100 A/µs; V
j
L
= 25 °C
= 0 V; T
= 1.2 Ω; V
j
= 25 °C
j
= 25 °C;
GS
Fig 6.
= 10 V;
R
(mΩ)
DSon
GS
18
12
j
6
0
= -10 V;
= 25 °C
of gate-source voltage; typical values
Drain-source on-state resistance as a function
4
N-channel TrenchPLUS standard level FET
BUK7C06-40AITE
8
Min
-
-
-
-
-
-
-
-
-
12
Typ
35
115
155
110
2.5
7.5
0.85
96
224
16
© NXP B.V. 2009. All rights reserved.
V
GS
Max
-
-
-
-
-
-
1.2
-
-
03ni22
(V)
20
Unit
ns
ns
ns
ns
nH
nH
V
ns
nC
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