BUK7E04-40A NXP Semiconductors, BUK7E04-40A Datasheet

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK7E04-40A

Manufacturer Part Number
BUK7E04-40A
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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BUK7E04-40A
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Quantity:
12 500
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
D
DS
tot
DSon
Low conduction losses due to low
on-state resistance
Q101 compliant
12 V loads
Automotive and general purpose
power switching
BUK7E04-40A
N-channel TrenchMOS standard level FET
Rev. 03 — 15 June 2010
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
Conditions
T
V
see
T
V
T
see
V
T
see
j
mb
j
j
GS
GS
GS
≥ 25 °C; T
= 175 °C; see
= 25 °C; see
Figure
Figure 12
Figure 12
= 25 °C; see
= 10 V; T
= 10 V; I
= 10 V; I
3; see
j
D
D
≤ 175 °C
mb
= 25 A;
= 25 A;
Figure
= 25 °C;
Figure
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
Motors, lamps and solenoids
Figure 2
Figure 1
11;
11;
[1]
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
-
3.9
Max Unit
40
75
300
8.5
4.5
V
A
W
mΩ
mΩ

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BUK7E04-40A Summary of contents

Page 1

... BUK7E04-40A N-channel TrenchMOS standard level FET Rev. 03 — 15 June 2010 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... Figure 13 Simplified outline SOT226 (I2PAK) Description plastic single-ended package (I2PAK); TO-262 All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 June 2010 BUK7E04-40A N-channel TrenchMOS standard level FET Min ≤ sup = °C; unclamped = ° ...

Page 3

... ° ≤ Ω sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 June 2010 BUK7E04-40A Min Typ Max - - - [ 198 [ ...

Page 4

... T (°C) mb Fig All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 June 2010 BUK7E04-40A N-channel TrenchMOS standard level FET 120 der 100 Normalized total power dissipation as a function of mounting base temperature 03ne68 = 10 μs ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7E04-40A Product data sheet Conditions see Figure 4 vertical in still air −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 June 2010 BUK7E04-40A N-channel TrenchMOS standard level FET Min Typ - - - 60 03ne69 t p δ ...

Page 6

... ° see Figure /dt = -100 A/µ - All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 June 2010 BUK7E04-40A Min Typ Max = -55 ° ° ...

Page 7

... DS Fig 6. 03aa35 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 June 2010 BUK7E04-40A N-channel TrenchMOS standard level FET 6 DSon Drain-source on-state resistance as a function of gate-source voltage; typical values 100 g fs ...

Page 8

... Fig 10. Gate-source threshold voltage as a function of 03ne66 0.5 300 400 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 June 2010 BUK7E04-40A N-channel TrenchMOS standard level FET 5 4 max 3 typ 2 min 1 0 − 120 junction temperature 2 ...

Page 9

... Fig 14. Input, output and reverse transfer capacitances 200 I S (A) 150 100 50 = 175 ° 0.5 1.0 All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 June 2010 BUK7E04-40A N-channel TrenchMOS standard level FET − function of drain-source voltage; typical values 03ne60 = 25 ° ...

Page 10

... max 0.7 1.6 10.3 11 2.54 0.4 1.2 9.7 REFERENCES JEDEC JEITA TO-262 All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 June 2010 BUK7E04-40A N-channel TrenchMOS standard level FET mounting base 15.0 3.30 2.6 13.5 2.79 2.2 EUROPEAN PROJECTION SOT226 ISSUE DATE 06-02-14 09-08-25 © NXP B.V. 2010. All rights reserved. ...

Page 11

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK7E04-40A separated from data sheet BUK7504_7604_7E04_40A v.2. 20011107 Product data All information provided in this document is subject to legal disclaimers. ...

Page 12

... All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 June 2010 BUK7E04-40A N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 June 2010 BUK7E04-40A N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 15 June 2010 Document identifier: BUK7E04-40A ...

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