BUK7E04-40A,127 NXP Semiconductors, BUK7E04-40A,127 Datasheet
BUK7E04-40A,127
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BUK7E04-40A,127 Summary of contents
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... BUK7E04-40A N-channel TrenchMOS standard level FET Rev. 03 — 15 June 2010 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... see Figure 13 Simplified outline SOT226 (I2PAK) Description plastic single-ended package (I2PAK); TO-262 All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 June 2010 BUK7E04-40A N-channel TrenchMOS standard level FET Min ≤ sup = °C; unclamped = °C; j Graphic symbol G mbb076 Typ Max Unit - 1 ...
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... Figure 1 ≤ 10 µs; pulsed ° see Figure °C; see Figure °C mb ≤ 10 µs; pulsed ° ≤ Ω sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 June 2010 BUK7E04-40A Min Typ Max - - - [ 198 [ [ 794 - - 300 -55 - ...
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... Product data sheet 03ne93 P (%) 150 175 200 T (°C) mb Fig All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 June 2010 BUK7E04-40A N-channel TrenchMOS standard level FET 120 der 100 Normalized total power dissipation as a function of mounting base temperature 03ne68 = 10 μ 100 μ ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7E04-40A Product data sheet Conditions see Figure 4 vertical in still air −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 June 2010 BUK7E04-40A N-channel TrenchMOS standard level FET Min Typ - - - 60 03ne69 t p δ ...
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... °C j from source lead to source bond pad ; ° ° see Figure /dt = -100 A/µ - All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 June 2010 BUK7E04-40A Min Typ Max = -55 ° ° 4 500 - 0.05 10 ...
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... V (V) = 5.5 GS 4.5 4 (V) DS Fig 6. 03aa35 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 June 2010 BUK7E04-40A N-channel TrenchMOS standard level FET 6 DSon Drain-source on-state resistance as a function of gate-source voltage; typical values 100 Forward transconductance as a function of drain current ...
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... Fig 10. Gate-source threshold voltage as a function of 03ne66 0.5 300 400 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 June 2010 BUK7E04-40A N-channel TrenchMOS standard level FET 5 4 max 3 typ 2 min 1 0 − 120 junction temperature 2 ...
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... Fig 14. Input, output and reverse transfer capacitances 200 I S (A) 150 100 50 = 175 ° 0.5 1.0 All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 June 2010 BUK7E04-40A N-channel TrenchMOS standard level FET − function of drain-source voltage; typical values 03ne60 = 25 ° ...
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... max 0.7 1.6 10.3 11 2.54 0.4 1.2 9.7 REFERENCES JEDEC JEITA TO-262 All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 June 2010 BUK7E04-40A N-channel TrenchMOS standard level FET mounting base 15.0 3.30 2.6 13.5 2.79 2.2 EUROPEAN PROJECTION SOT226 ...
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... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK7E04-40A separated from data sheet BUK7504_7604_7E04_40A v.2. 20011107 Product data All information provided in this document is subject to legal disclaimers. ...
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... All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 June 2010 BUK7E04-40A N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 June 2010 BUK7E04-40A N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 15 June 2010 Document identifier: BUK7E04-40A ...