BUK7E04-40A NXP Semiconductors, BUK7E04-40A Datasheet - Page 7

• Manufacturer Part Number: BUK7E04-40A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7E04-40A
Product data sheet
Fig 5.
Fig 7.
(A)
I
D
(A)
I
10
10
10
10
10
10
D
450
400
350
300
250
200
150
100
50
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
12
20
10
2
9
8.5
2
4
min
typ
6
7.5
4
V
GS
max
V
All information provided in this document is subject to legal disclaimers.
8
GS
(V) = 5.5
V
DS
(V)
03ne65
03aa35
(V)
10
6
Rev. 03 — 15 June 2010
6.5
4.5
4.5
Fig 6.
Fig 8.
R
(mΩ)
DSon
g
(S)
fs
100
80
60
40
20
6
5
4
3
0
of gate-source voltage; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
5
0
N-channel TrenchMOS standard level FET
20
10
BUK7E04-40A
40
15
60
V
© NXP B.V. 2010. All rights reserved.
GS
I
D
(V)
(A)
03ne64
03ne62
20
80
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