si4539 Fairchild Semiconductor, si4539 Datasheet

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si4539

Manufacturer Part Number
si4539
Description
Dual N & P-channel Enhancement Mode Field Effect Transistor
Manufacturer
Fairchild Semiconductor
Datasheet

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© 2001 Fairchild Semiconductor International
Absolute Maximum Ratings
These dual N- and P -Channel enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for low
voltage applications such as notebook computer power
management and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
transients are needed.
Symbol
V
V
I
P
T
THERMAL CHARACTERISTICS
R
R
General Description
Si4539DY
Dual N & P-Channel Enhancement Mode Field Effect Transistor
D
DSS
GSS
D
J
,T
JA
JC
STG
SOT-23
D1
SO-8
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D1
D2
D2
SuperSOT
- Pulsed
pin 1
S1
TM
-6
G1
T
S2
A
= 25°C unless otherwise noted
G2
SuperSOT
(Note 1)
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
TM
-8
Features
N-Channel 7.0 A,30 V, R
P-Channel -5.0 A,-30 V,R
High density cell design for extremely low R
High power and current handling capability in a widely used
surface mount package.
Dual (N & P-Channel) MOSFET in surface mount package.
SO-8
N-Channel
6
5
8
7
20
20
30
7
-55 to 150
R
SOT-223
R
DS(ON)
1.6
0.9
78
40
DS(ON)
DS(ON)
2
1
DS(ON)
=0.028
=0.040
=0.052
=0.080
P-Channel
-30
-20
-20
-5
@ V
@ V
@ V
@ V
1
1
4
3
2
DS(ON)
GS
January 2001
GS
GS
GS
SOIC-16
=10 V
= 4.5 V.
=-4.5 V.
=-10 V
.
Si4539DY Rev. A
Units
°C/W
°C/W
W
°C
V
V
A

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si4539 Summary of contents

Page 1

... January 2001 =0.028 @ V =10 V DS(ON =0.040 @ V = 4.5 V. DS(ON) GS =0.052 @ V =-10 V DS(ON =0.080 @ V =-4.5 V. DS(ON DS(ON) SOT-223 SOIC- P-Channel 30 - -20 2 1.6 1 0.9 -55 to 150 78 40 Units °C °C/W °C/W Si4539DY Rev. A ...

Page 2

... P- 1.0 MHz N-Ch P-Ch Min Typ Max Units mV/ C -25 1 µA -1 µA All 100 nA All -100 -4.4 mV/ C 3.2 0.024 0.028 0.035 0.04 0.044 0.052 0.068 0. - 650 pF 730 345 pF 400 Si4539DY Rev. A ...

Page 3

... 125 C 0.02 in pad of 2oz copper. Type Min Typ Max Units P-Ch 90 125 N-Ch 3.2 nC P-Ch 3.5 N-Ch 4.3 nC P-Ch 3.6 N-Ch 1.3 A P-Ch -1.3 A N-Ch 0.75 1.2 V P-Ch -0.75 -1 guaranteed 135 C 0.003 in 2 pad of 2oz copper. Si4539DY Rev. A ...

Page 4

... GATE TO SOURCE VOLTAGE (V) GS Figure 4. On-Resistance Variation with Gate-to-Source Voltage 125° 25°C -55°C 0 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature 25° 1.2 Si4539DY Rev. A ...

Page 5

... Figure 8. Capacitance Characteristics 0. Figure 10. Single Pulse Maximum Power MHz 0.1 0.2 0 DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =135 °C 25°C A 0.1 0.5 10 SINGLE PULSE TIME (SEC) Dissipation. C iss C oss C rss 30 50 100 300 Si4539DY Rev. A ...

Page 6

... DRAIN CURRENT (A) D Drain Current and Gate Voltage -2.0A D 125°C 25° GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125°C J 25°C -55°C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature. Si4539DY Rev 1.4 ...

Page 7

... Figure 18. Capacitance Characteristics 0. Figure 20. Single Pulse Maximum Power C iss C oss C rss MHz 0 DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =135 °C 25°C A 0.1 0 100 SINGLE PULSE TIME (SEC) Dissipation. 30 300 Si4539DY Rev. A ...

Page 8

... Thermal characterization performed using the conditions described in note 1. Transient thermalresponse will change depending on the circuit board design. (continued) 0.01 0 TIME (sec ( 135 °C/W JA P(pk ( Duty Cycle 100 300 Si4539DY Rev. A ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ...

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