VNQ660 STMicroelectronics, VNQ660 Datasheet

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VNQ660

Manufacturer Part Number
VNQ660
Description
QUAD CHANNEL HIGH SIDE SOLID STATE RELAY
Manufacturer
STMicroelectronics
Datasheet

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ABSOLUTE MAXIMUM RATING
(**) See application schematic at page 8
July 2003
(*) Per each channel
n
n
DESCRIPTION
The VNQ660SP is a monolithic device made by
using|
VNQ660SP
OUTPUT CURRENT PER CHANNEL: 6A
SHUT- DOWN
VERY LOW STAND-BY POWER DISSIPATION
LOSS OF GROUND & LOSS OF V
CMOS COMPATIBLE INPUTS
OPEN LOAD DETECTION (OFF STATE)
UNDERVOLTAGE & OVERVOLTAGE
OVERVOLTAGE CLAMP
THERMAL SHUT-DOWN
CURRENT LIMITATION
PROTECTION AGAINST:
REVERSE BATTERY PROTECTION (**)
Symbol
I
V
-V
I
I
V
STAT
T
GND
P
OUT
E
I
ESD
I
TYPE
T
IN
CC
stg
R
CC
tot
C
j
STMicroelectronics
QUAD CHANNEL HIGH SIDE SOLID STATE RELAY
®
Supply voltage (continuous)
Reverse supply voltage (continuous)
Output current (continuous), per each channel
Reverse output current (continuous), per each channel
Input current
Status current
Ground current at T
Electrostatic Discharge (Human Body Model: R=1.5K
- INPUT
- STATUS
- OUTPUT
- V
Power dissipation at T
Junction operating temperature
Storage temperature
Non repetitive clamping energy at T
CC
50m (*)
R
DS(on)
C
<25 C (continuous)
I
OUT
6A
C
VIPower
=25 C
CC
Parameter
36 V
V
C
CC
=25 C
M0-3
Technology, intended for driving resistive or
inductive loads with one side connected to ground.
This device has four independent channels. Built-
in thermal shut down and output current limitation
protect the chip from over temperature and short
circuit.
PowerSO-10™
PACKAGE
C=100pF)
10
ORDER CODES
PowerSO-10™
VNQ660SP
Internally limited
TUBE
-40 to 150
-65 to 150
VNQ660SP
Value
+/- 10
+/- 10
113.6
4000
4000
5000
5000
-200
-0.3
150
-15
41
1
VNQ660SP13TR
T&R
Unit
mA
mA
mA
mJ
W
V
V
A
A
V
V
V
V
C
C
1/16

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VNQ660 Summary of contents

Page 1

... OVERVOLTAGE CLAMP THERMAL SHUT-DOWN CURRENT LIMITATION VERY LOW STAND-BY POWER DISSIPATION PROTECTION AGAINST: n LOSS OF GROUND & LOSS OF V REVERSE BATTERY PROTECTION (**) DESCRIPTION The VNQ660SP is a monolithic device made by using| STMicroelectronics ABSOLUTE MAXIMUM RATING Symbol V Supply voltage (continuous Reverse supply voltage (continuous) ...

Page 2

... VNQ660SP BLOCK DIAGRAM INPUT 1 INPUT 2 INPUT 3 INPUT 4 STATUS STATUS OVERTEMP. 1 OVERTEMP. 2 OVERTEMP. 3 OVERTEMP. 4 CURRENT AND VOLTAGE CONVENTIONS I IN1 I V IN2 IN1 I V IN3 IN2 I V IN4 IN3 V IN4 2/16 OVERVOLTAGE UNDERVOLTAGE DRIVER 1 DRIVER 2 LOGIC DRIVER 3 DRIVER 4 OPEN LOAD OFF-STATE GND V CC INPUT 1 ...

Page 3

... V =6V OUT =0V IN OUT V =0V; V =3.5V IN OUT V =V =0V; V =13V; T =125°C IN OUT =0V; V =13V; T =25°C IN OUT CC j VNQ660SP GND OUTPUT 4 OUTPUT 3 OUTPUT 2 OUTPUT 1 Value Unit 1.1 C/W 51.1 (*) C/W Min Typ Max Unit 3 ...

Page 4

... STAT I =-1mA STAT Test Conditions V =3.25V IN V =1.25V IN I =1mA IN I =-1mA IN Test Conditions (*) V = =18V (*) CC VNQ660SP Min Typ Max Unit 140 s See relative V s diagram See relative V s diagram Min Typ Max Unit 150 170 200 ...

Page 5

... TEST LEVELS II III -50 V -75 V +50 V +75 V -50 V -100 V + Test Levels Result Contents 10 VNQ660SP IV Delays and Impedance -100 +100 V 0 -150 V 0 +100 V 0 100 ms, 0.01 III ...

Page 6

... VNQ660SP TRUTH TABLE (per each channel) CONDITIONS Normal Operation Current Limitation Overtemperature Undervoltage Overvoltage Output Voltage > Output Current < Figure 1: Status timing waveforms OPENLOAD STATUS TIMING STAT t DOL 6/16 2 INPUT OUTPUT ...

Page 7

... V CC INPUT n LOAD VOLTAGE n STATUS INPUT n LOAD VOLTAGE n STATUS n INPUT n LOAD VOLTAGE n STATUS n T TSD INPUT n LOAD CURRENT n STATUS n NORMAL OPERATION UNDERVOLTAGE V USDhyst V USD undefined OVERVOLTAGE V <V V > OPENLOAD with external pull-up t DOL OVERTEMPERATURE VNQ660SP DOL 7/16 ...

Page 8

... VNQ660SP APPLICATION SCHEMATIC +5V +5V R prot R prot C R prot R prot R prot Note: Channels 3 & 4 have the same internal circuit as channel 1 & 2. GND PROTECTION NETWORK REVERSE BATTERY Solution 1: Resistor in the ground line (R can be used with any type of load. The following is an indication on how to dimension the R resistor ...

Page 9

... HSD I/Os (Input levels compatibility) with the latch-up limit of C I/Os CCpeak Calculation example: max DC rating. The For V CCpeak 5k R prot Recommended R ) prot VNQ660SP C and the current required by the latchup prot GND = - 100V and I 20mA; V latchup OH C 65k . ...

Page 10

... VNQ660SP Off State Output Current IL(off1) (µ Off state 8 Vcc=24V Vout= -50 - 100 Tc (ºC) Input Clamp Voltage Vicl (V) 8 7.8 Iin=1mA 7.6 7.4 7.2 7 6.8 6.6 6.4 6.2 6 -50 - 100 Tc (ºC) Input Low Level Vil (V) 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 -50 - ...

Page 11

... On State Resistance Vs V RDS(on) (mOhm) 100 125 150 175 8 9 VNQ660SP - 100 125 150 Tc (ºC) Vcc=13V Rl=13Ohm - 100 125 150 Tc (ºC) CC Iout=1A Tc=150ºC Tc=25ºC Tc= - 40ºC ...

Page 12

... VNQ660SP Status Clamp Voltage Vscl (V) 8 7.8 Istat=1mA 7.6 7.4 7.2 7 6.8 6.6 6.4 6.2 6 -50 - 100 Tc (ºC) Status Low Output Voltage Vstat (V) 0.6 0.525 Istat=1.6mA 0.45 0.375 0.3 0.225 0.15 0.075 0 -50 - 100 Tc (ºC) 12/16 1 Status Leakage Current Ilstat (µA) 0.05 0.045 0.04 0.035 0.03 0.025 0.02 0.015 0.01 0.005 0 125 150 ...

Page 13

... Cu thickness=35 m, Copper areas: from minimum pad lay-out to 8cm R Vs. PCB copper area in open box free air condition thj-amb RTHj_amb (°C/ measurements (PCB FR4 area= 58mm x 58mm, PCB thickness=2mm PCB Cu heatsink area (cm^2) VNQ660SP 2 ). Tj-Tamb=50° 13/16 ...

Page 14

... VNQ660SP PowerSO-10™ MECHANICAL DATA DIM. MIN. A 3.35 A (*) 3.4 A1 0.00 B 0.40 B (*) 0.37 C 0.35 C (*) 0.23 D 9.40 D1 7.40 E 9.30 E2 7.20 E2 (*) 7.30 E4 5.90 E4 (*) 5. 1.25 F (*) 1.20 H 13.80 H (*) 13. 1.20 L (*) 0.80 0º (*) 2º (*) Muar only POA P013P 0. 14/16 mm. TYP MAX. 3.65 3.6 0.10 0.60 0.53 0.55 0.32 9.60 7.60 9.50 7.60 7.50 6.10 6.30 1.27 1.35 1.40 14.40 14.35 0.50 1.80 1.10 8º 8º SEATING PLANE DETAIL "A" ...

Page 15

... C A 0.67 - 0.73 0.54 - 0.6 All dimensions are in mm. 1.27 Base Q.ty Bulk Q.ty Tube length (± 0.5) A Casablanca 50 Muar 1.5 1.5 11.5 6.5 2 End Top No components cover 500mm min tape VNQ660SP CASABLANCA MUAR (± 0.1) 1000 532 10.4 16.4 1000 532 4.9 17.2 REEL DIMENSIONS Base Q.ty 600 Bulk Q.ty 600 A (max) 330 B (min) 1.5 C (± -0) 24 ...

Page 16

... STMicroelectronics - Printed in ITALY- All Rights Reserved. Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. The ST logo is a trademark of STMicroelectronics STMicroelectronics GROUP OF COMPANIES http://www.st.com VNQ660SP 16/16 ...

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